Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization
- Jin Hong Park
- , M. Tada
- , H. Y. Yu
- , D. Kuzum
- , Y. Na
- , K. C. Saraswat
- Stanford University
- NEC Corporation
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review