Low-resistivity Cu film electrodeposited with 3-N,N- dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices

In this study, we analyzed the properties of Cu films electrodeposited with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate (DPS) as an organic additive in damascene Cu electrodeposition, in comparison with bis(sulfopropyl) disulfide (SPS). It was observed that the resistivity of Cu film electrodeposited with DPS was lower than that with SPS. Spectroscopic analyses showed that the impurity level and crystallinity of Cu films are almost the same, but the difference was found in the film roughness. Low roughness of Cu film electrodeposited with DPS led to the low resistivity, and it was speculated that the low roughness is related to the strong adsorption through the nitrogen atom in the DPS molecule.