Low resistance nonalloyed Al-based ohmic contacts on n-ZnO:Al

Han Ki Kim; Ji Myon Lee

doi:10.1016/j.spmi.2007.04.054

Low resistance nonalloyed Al-based ohmic contacts on n-ZnO:Al

Han Ki Kim
, Ji Myon Lee

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We have investigated the electrical properties of nonalloyed Al, Al/Au, and Al/Pt ohmic contacts on n-type ZnO:Al (2×10¹⁸ cm^-3). All Al-based nonalloyed ohmic contacts on the n-ZnO:Al reveal linear current-voltage behavior with low specific contact resistivity of 8.5×10^-4 (Al), 8.0×10^-5 (Al/Au) and 1.2×10^-5 Ω cm² (Al/Pt), respectively. Using secondary ion mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS) depth profiles, it was found that the O atoms in the ZnO:Al layer outdiffused to Al metal layer while the Al atoms indiffused to the surface region of ZnO:Al. This interdiffusion between Al and O atoms at room temperature results in an increase of doping concentration in the surface region of the ZnO:Al and reduces a specific contact resistivity of the Al-based ohmic contacts without thermal annealing process.

Original language	English
Pages (from-to)	255-258
Number of pages	4
Journal	Superlattices and Microstructures
Volume	42
Issue number	1-6
DOIs	https://doi.org/10.1016/j.spmi.2007.04.054
State	Published - Jul 2007
Externally published	Yes

Keywords

Al/Pt
Depth profile
Interdiffusion
Ohmic contact
ZnO

Access to Document

10.1016/j.spmi.2007.04.054

Cite this

@article{bf0d5ef75872454188612da1de34c03e,

title = "Low resistance nonalloyed Al-based ohmic contacts on n-ZnO:Al",

abstract = "We have investigated the electrical properties of nonalloyed Al, Al/Au, and Al/Pt ohmic contacts on n-type ZnO:Al (2×1018 cm-3). All Al-based nonalloyed ohmic contacts on the n-ZnO:Al reveal linear current-voltage behavior with low specific contact resistivity of 8.5×10-4 (Al), 8.0×10-5 (Al/Au) and 1.2×10-5 Ω cm2 (Al/Pt), respectively. Using secondary ion mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS) depth profiles, it was found that the O atoms in the ZnO:Al layer outdiffused to Al metal layer while the Al atoms indiffused to the surface region of ZnO:Al. This interdiffusion between Al and O atoms at room temperature results in an increase of doping concentration in the surface region of the ZnO:Al and reduces a specific contact resistivity of the Al-based ohmic contacts without thermal annealing process.",

keywords = "Al/Pt, Depth profile, Interdiffusion, Ohmic contact, ZnO",

author = "Kim, \{Han Ki\} and Lee, \{Ji Myon\}",

year = "2007",

month = jul,

doi = "10.1016/j.spmi.2007.04.054",

language = "English",

volume = "42",

pages = "255--258",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1-6",

}

TY - JOUR

T1 - Low resistance nonalloyed Al-based ohmic contacts on n-ZnO:Al

AU - Kim, Han Ki

AU - Lee, Ji Myon

PY - 2007/7

Y1 - 2007/7

N2 - We have investigated the electrical properties of nonalloyed Al, Al/Au, and Al/Pt ohmic contacts on n-type ZnO:Al (2×1018 cm-3). All Al-based nonalloyed ohmic contacts on the n-ZnO:Al reveal linear current-voltage behavior with low specific contact resistivity of 8.5×10-4 (Al), 8.0×10-5 (Al/Au) and 1.2×10-5 Ω cm2 (Al/Pt), respectively. Using secondary ion mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS) depth profiles, it was found that the O atoms in the ZnO:Al layer outdiffused to Al metal layer while the Al atoms indiffused to the surface region of ZnO:Al. This interdiffusion between Al and O atoms at room temperature results in an increase of doping concentration in the surface region of the ZnO:Al and reduces a specific contact resistivity of the Al-based ohmic contacts without thermal annealing process.

AB - We have investigated the electrical properties of nonalloyed Al, Al/Au, and Al/Pt ohmic contacts on n-type ZnO:Al (2×1018 cm-3). All Al-based nonalloyed ohmic contacts on the n-ZnO:Al reveal linear current-voltage behavior with low specific contact resistivity of 8.5×10-4 (Al), 8.0×10-5 (Al/Au) and 1.2×10-5 Ω cm2 (Al/Pt), respectively. Using secondary ion mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS) depth profiles, it was found that the O atoms in the ZnO:Al layer outdiffused to Al metal layer while the Al atoms indiffused to the surface region of ZnO:Al. This interdiffusion between Al and O atoms at room temperature results in an increase of doping concentration in the surface region of the ZnO:Al and reduces a specific contact resistivity of the Al-based ohmic contacts without thermal annealing process.

KW - Al/Pt

KW - Depth profile

KW - Interdiffusion

KW - Ohmic contact

KW - ZnO

UR - https://www.scopus.com/pages/publications/34548504837

U2 - 10.1016/j.spmi.2007.04.054

DO - 10.1016/j.spmi.2007.04.054

M3 - Article

AN - SCOPUS:34548504837

SN - 0749-6036

VL - 42

SP - 255

EP - 258

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1-6

ER -

Low resistance nonalloyed Al-based ohmic contacts on n-ZnO:Al

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this