TY - JOUR
T1 - Low resistance and high transparent amorphous izto electrode cosputtered by linear facing target sputtering for organic photovoltaics
AU - Jeong, Jin A.
AU - Kim, Han Ki
AU - Na, Seok In
PY - 2009
Y1 - 2009
N2 - We report on the characteristics of an amorphous indium zinc tin oxide (a-IZTO) multicomponent electrode cosputtered by linear facing target sputtering (LFTS) using indium tin oxide (ITO) and indium zinc oxide targets for bulk heterojunction organic solar cells (OSCs). Without substrate heating or postannealing, the a-IZTO electrode exhibited a low sheet resistance of 17.48 ω/□, a high average optical transmittance of 88.1% at a wavelength of 500 nm, and a high work function of 5.22 eV. In addition, the a-IZTO electrode with a root-mean-square (rms) roughness of 0.35 nm shows a much smoother surface than the crystalline ITO electrode (rms roughness of 1.25 nm), due to the absence of bombardment of energetic particles on the IZTO electrode during the cosputtering process. Moreover, the OSC with the a-IZTO anode showed a comparable open-circuit voltage (0.56 V), short-circuit current (9.16 mA/ cm2), fill factor (68.1%), and power conversion efficiency (3.50%) to an OSC with a commercial crystalline ITO electrode. This indicates that the LFTS-grown a-IZTO electrode is a visible alternative to crystalline ITO electrodes for low cost OSCs, eliminating the need for the annealing or substrate heating step generally required for preparing high quality anode electrodes.
AB - We report on the characteristics of an amorphous indium zinc tin oxide (a-IZTO) multicomponent electrode cosputtered by linear facing target sputtering (LFTS) using indium tin oxide (ITO) and indium zinc oxide targets for bulk heterojunction organic solar cells (OSCs). Without substrate heating or postannealing, the a-IZTO electrode exhibited a low sheet resistance of 17.48 ω/□, a high average optical transmittance of 88.1% at a wavelength of 500 nm, and a high work function of 5.22 eV. In addition, the a-IZTO electrode with a root-mean-square (rms) roughness of 0.35 nm shows a much smoother surface than the crystalline ITO electrode (rms roughness of 1.25 nm), due to the absence of bombardment of energetic particles on the IZTO electrode during the cosputtering process. Moreover, the OSC with the a-IZTO anode showed a comparable open-circuit voltage (0.56 V), short-circuit current (9.16 mA/ cm2), fill factor (68.1%), and power conversion efficiency (3.50%) to an OSC with a commercial crystalline ITO electrode. This indicates that the LFTS-grown a-IZTO electrode is a visible alternative to crystalline ITO electrodes for low cost OSCs, eliminating the need for the annealing or substrate heating step generally required for preparing high quality anode electrodes.
UR - https://www.scopus.com/pages/publications/67651219249
U2 - 10.1149/1.3158052
DO - 10.1149/1.3158052
M3 - Article
AN - SCOPUS:67651219249
SN - 1099-0062
VL - 12
SP - J80-J82
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
IS - 9
ER -
