Low-Power Scan Driver Circuit Employing Threshold Voltage Modulation with Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors

This article proposes a novel low-power scan driver circuit using double-gate (DG) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). For low power consumption, the threshold voltage (VTH) modulation method with DG TFTs is adopted, enabling enhancement-mode operation. The functionality of the designed circuit was verified through experimental measurements and supported by simulations. By implementing a VTH modulation mechanism, the proposed circuit exhibits only a 23.9% increase in power consumption under a VTH shift of -3 V. It shows much lower sensitivity to negative VTH variation compared to single-gate (SG) TFT-based circuits. Therefore, the proposed circuit ensures stable and consistent low-power operation.