@inproceedings{c90dd71e09884ac9b34bd11ccbb0d951,
title = "Low-power gate driver circuit using depletion mode a-IGZO TFTs",
abstract = "This paper proposes a new gate driver using depletion mode a-IGZO thin film transistors (TFTs). First approach, the proposed gate driver circuit is possible to decrease discharging of Q node due to leakage current Second approach, the driving TFT Vp of the inverter in the proposed gate driver circuit has zero less using two low supplies (VSS and VSSL). Simulation results verify the feasibility for driving characteristics and power consumption of the proposed gate driver circuit.",
keywords = "Amorphous IGZO thin film transistors, Depletion mode, Gate driver, Leakage current, Low-power, Q node",
author = "Kim, \{Jin Ho\} and Sihan Wang and Jongsu Oh and Park, \{Kee Chan\} and Kim, \{Yong Sang\}",
note = "Publisher Copyright: {\textcopyright} 2016 The Society for Information Display.; 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 ; Conference date: 07-12-2016 Through 09-12-2016",
year = "2016",
language = "English",
series = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
publisher = "Society for Information Display",
pages = "875--877",
booktitle = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
}