Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

Minwoo Cho; Kyeong Youn Song; Kwan hyun Cho; Hoo Jeong Lee

doi:10.1063/5.0060061

Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

Minwoo Cho, Kyeong Youn Song, Kwan hyun Cho, Hoo Jeong Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1 J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (∼50 J/cm²) demonstrates good electrical properties with a mobility of 0.34 cm²/V s and an on-off ratio of 10⁶ and a substrate temperature under 210 °C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol-gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol-gel reactions in films.

Original language	English
Article number	132102
Journal	Applied Physics Letters
Volume	119
Issue number	13
DOIs	https://doi.org/10.1063/5.0060061
State	Published - 27 Sep 2021

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title = "Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber",

abstract = "A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1 J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (∼50 J/cm2) demonstrates good electrical properties with a mobility of 0.34 cm2/V s and an on-off ratio of 106 and a substrate temperature under 210 °C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol-gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol-gel reactions in films.",

author = "Minwoo Cho and Song, \{Kyeong Youn\} and Cho, \{Kwan hyun\} and Lee, \{Hoo Jeong\}",

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doi = "10.1063/5.0060061",

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T1 - Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

AU - Cho, Minwoo

AU - Song, Kyeong Youn

AU - Cho, Kwan hyun

AU - Lee, Hoo Jeong

PY - 2021/9/27

Y1 - 2021/9/27

N2 - A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1 J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (∼50 J/cm2) demonstrates good electrical properties with a mobility of 0.34 cm2/V s and an on-off ratio of 106 and a substrate temperature under 210 °C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol-gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol-gel reactions in films.

AB - A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1 J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (∼50 J/cm2) demonstrates good electrical properties with a mobility of 0.34 cm2/V s and an on-off ratio of 106 and a substrate temperature under 210 °C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol-gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol-gel reactions in films.

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U2 - 10.1063/5.0060061

DO - 10.1063/5.0060061

M3 - Article

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VL - 119

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132102

ER -

Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

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