Low driving voltage in organic light-emitting diodes using MoO3 as an interlayer in hole transport layer

Kyoung Soo Yook; Jun Yeob Lee

doi:10.1016/j.synthmet.2008.07.016

Low driving voltage in organic light-emitting diodes using MoO₃ as an interlayer in hole transport layer

Kyoung Soo Yook, Jun Yeob Lee

Dankook University

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying MoO₃ as an interlayer between hole injection layer (HIL) and hole transport layer (HTL). MoO₃ was effective as an interlayer between HIL and HTL due to its valence band of around 5.3 eV which is suitable for hole injection. Hole injection from HIL to HTL was enhanced by MoO₃ interlayer and driving voltage of green fluorescent device could be lowered by 1.3 V at 1000 cd/m² by using thin MoO₃ interlayer.

Original language	English
Pages (from-to)	69-71
Number of pages	3
Journal	Synthetic Metals
Volume	159
Issue number	1-2
DOIs	https://doi.org/10.1016/j.synthmet.2008.07.016
State	Published - Jan 2009
Externally published	Yes

Keywords

Interfacial energy barrier
Low driving voltage
MoO interlayer

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10.1016/j.synthmet.2008.07.016

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abstract = "Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying MoO3 as an interlayer between hole injection layer (HIL) and hole transport layer (HTL). MoO3 was effective as an interlayer between HIL and HTL due to its valence band of around 5.3 eV which is suitable for hole injection. Hole injection from HIL to HTL was enhanced by MoO3 interlayer and driving voltage of green fluorescent device could be lowered by 1.3 V at 1000 cd/m2 by using thin MoO3 interlayer.",

keywords = "Interfacial energy barrier, Low driving voltage, MoO interlayer",

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year = "2009",

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language = "English",

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AU - Yook, Kyoung Soo

AU - Lee, Jun Yeob

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N2 - Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying MoO3 as an interlayer between hole injection layer (HIL) and hole transport layer (HTL). MoO3 was effective as an interlayer between HIL and HTL due to its valence band of around 5.3 eV which is suitable for hole injection. Hole injection from HIL to HTL was enhanced by MoO3 interlayer and driving voltage of green fluorescent device could be lowered by 1.3 V at 1000 cd/m2 by using thin MoO3 interlayer.

AB - Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying MoO3 as an interlayer between hole injection layer (HIL) and hole transport layer (HTL). MoO3 was effective as an interlayer between HIL and HTL due to its valence band of around 5.3 eV which is suitable for hole injection. Hole injection from HIL to HTL was enhanced by MoO3 interlayer and driving voltage of green fluorescent device could be lowered by 1.3 V at 1000 cd/m2 by using thin MoO3 interlayer.

KW - Interfacial energy barrier

KW - Low driving voltage

KW - MoO interlayer

UR - https://www.scopus.com/pages/publications/59149107312

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DO - 10.1016/j.synthmet.2008.07.016

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JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-2

ER -

Low driving voltage in organic light-emitting diodes using MoO₃ as an interlayer in hole transport layer

Abstract

Keywords

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