Low damage atomic layer etching of ZrO 2 by using BCI 3 gas and ar neutral beam

W. S. Lim; J. B. Park; J. Y. Park; B. J. Park; G. Y. Yeom

doi:10.1166/jnn.2009.1748

Low damage atomic layer etching of ZrO ₂ by using BCI ₃ gas and ar neutral beam

W. S. Lim
, J. B. Park
, J. Y. Park
, B. J. Park
, G. Y. Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

This study examined the etch characteristics of Zr0 ₂ etched using an atomic layer etching (ALET)system with BCI ₃ gas for adsorption and an Ar neutral beam for desorption. The effect of the BCI ₃gas pressure and Ar neutral beam dose on the etch characteristics was examined. The results showed that the Zr0 ₂ etch rate was maintained at a constant etch rate of 1.07 A•/cycle at a BCI ₃ gas pressure >0.15 mTorr and an Ar beam flux ̇1.485x 1016 atoms/cm ².cycle. Under these constant etch rate conditions, the surface roughness of the etched Zr0 ₂ was similar to that of the as-receivedZr0 ₂. The surface composition of Zr0 ₂ etched by ALET was compared with that etched by BCI ₂inductively coupled plasma (ICP). The surface composition of Zr0 ₂ etched by ALET showed a similar composition to that of the as-received Zr0 ₂ while that etched by BCl ₃ ICP showed a Zr-rich surface.

Original language	English
Pages (from-to)	7379-7382
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	9
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2009.1748
State	Published - Dec 2009

Keywords

Atomic layer etching
High-k etching
Neutral-beam
Zirconium oxide

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@article{ee21aada436c43b08ab05096f66829f5,

title = "Low damage atomic layer etching of ZrO 2 by using BCI 3 gas and ar neutral beam",

abstract = "This study examined the etch characteristics of Zr0 2 etched using an atomic layer etching (ALET)system with BCI 3 gas for adsorption and an Ar neutral beam for desorption. The effect of the BCI 3gas pressure and Ar neutral beam dose on the etch characteristics was examined. The results showed that the Zr0 2 etch rate was maintained at a constant etch rate of 1.07 A•/cycle at a BCI 3 gas pressure >0.15 mTorr and an Ar beam flux{\. }1.485x 1016 atoms/cm 2.cycle. Under these constant etch rate conditions, the surface roughness of the etched Zr0 2 was similar to that of the as-receivedZr0 2. The surface composition of Zr0 2 etched by ALET was compared with that etched by BCI 2inductively coupled plasma (ICP). The surface composition of Zr0 2 etched by ALET showed a similar composition to that of the as-received Zr0 2 while that etched by BCl 3 ICP showed a Zr-rich surface.",

keywords = "Atomic layer etching, High-k etching, Neutral-beam, Zirconium oxide",

author = "Lim, \{W. S.\} and Park, \{J. B.\} and Park, \{J. Y.\} and Park, \{B. J.\} and Yeom, \{G. Y.\}",

year = "2009",

month = dec,

doi = "10.1166/jnn.2009.1748",

language = "English",

volume = "9",

pages = "7379--7382",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "12",

}

TY - JOUR

T1 - Low damage atomic layer etching of ZrO 2 by using BCI 3 gas and ar neutral beam

AU - Lim, W. S.

AU - Park, J. B.

AU - Park, J. Y.

AU - Park, B. J.

AU - Yeom, G. Y.

PY - 2009/12

Y1 - 2009/12

N2 - This study examined the etch characteristics of Zr0 2 etched using an atomic layer etching (ALET)system with BCI 3 gas for adsorption and an Ar neutral beam for desorption. The effect of the BCI 3gas pressure and Ar neutral beam dose on the etch characteristics was examined. The results showed that the Zr0 2 etch rate was maintained at a constant etch rate of 1.07 A•/cycle at a BCI 3 gas pressure >0.15 mTorr and an Ar beam flux ̇1.485x 1016 atoms/cm 2.cycle. Under these constant etch rate conditions, the surface roughness of the etched Zr0 2 was similar to that of the as-receivedZr0 2. The surface composition of Zr0 2 etched by ALET was compared with that etched by BCI 2inductively coupled plasma (ICP). The surface composition of Zr0 2 etched by ALET showed a similar composition to that of the as-received Zr0 2 while that etched by BCl 3 ICP showed a Zr-rich surface.

AB - This study examined the etch characteristics of Zr0 2 etched using an atomic layer etching (ALET)system with BCI 3 gas for adsorption and an Ar neutral beam for desorption. The effect of the BCI 3gas pressure and Ar neutral beam dose on the etch characteristics was examined. The results showed that the Zr0 2 etch rate was maintained at a constant etch rate of 1.07 A•/cycle at a BCI 3 gas pressure >0.15 mTorr and an Ar beam flux ̇1.485x 1016 atoms/cm 2.cycle. Under these constant etch rate conditions, the surface roughness of the etched Zr0 2 was similar to that of the as-receivedZr0 2. The surface composition of Zr0 2 etched by ALET was compared with that etched by BCI 2inductively coupled plasma (ICP). The surface composition of Zr0 2 etched by ALET showed a similar composition to that of the as-received Zr0 2 while that etched by BCl 3 ICP showed a Zr-rich surface.

KW - Atomic layer etching

KW - High-k etching

KW - Neutral-beam

KW - Zirconium oxide

UR - https://www.scopus.com/pages/publications/70350214672

U2 - 10.1166/jnn.2009.1748

DO - 10.1166/jnn.2009.1748

M3 - Article

AN - SCOPUS:70350214672

SN - 1533-4880

VL - 9

SP - 7379

EP - 7382

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 12

ER -

Low damage atomic layer etching of ZrO ₂ by using BCI ₃ gas and ar neutral beam

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