Localised back contact to ONO passivated c-Si solar cells using laser fired contact method

P. H. Choi; D. H. Baek; H. J. Kim; K. S. Kim; H. S. Park; J. H. Lee; J. S. Yi; B. D. Choi

doi:10.1049/el.2012.4465

Localised back contact to ONO passivated c-Si solar cells using laser fired contact method

P. H. Choi
, D. H. Baek
, H. J. Kim
, K. S. Kim
, H. S. Park
, J. H. Lee
, J. S. Yi
, B. D. Choi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

Abstract

The localised back contact method for SiO₂/SiN _x/SiO₂ (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τeff), back surface recombination velocity (Seff) and diffusion length (L_D) with the ONO passivated layer rather than with the SiN_x single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.

Original language	English
Pages (from-to)	300-302
Number of pages	3
Journal	Electronics Letters
Volume	49
Issue number	4
DOIs	https://doi.org/10.1049/el.2012.4465
State	Published - 14 Feb 2013

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title = "Localised back contact to ONO passivated c-Si solar cells using laser fired contact method",

abstract = "The localised back contact method for SiO2/SiN x/SiO2 (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τeff), back surface recombination velocity (Seff) and diffusion length (LD) with the ONO passivated layer rather than with the SiNx single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.",

author = "Choi, \{P. H.\} and Baek, \{D. H.\} and Kim, \{H. J.\} and Kim, \{K. S.\} and Park, \{H. S.\} and Lee, \{J. H.\} and Yi, \{J. S.\} and Choi, \{B. D.\}",

year = "2013",

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doi = "10.1049/el.2012.4465",

language = "English",

volume = "49",

pages = "300--302",

journal = "Electronics Letters",

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TY - JOUR

T1 - Localised back contact to ONO passivated c-Si solar cells using laser fired contact method

AU - Choi, P. H.

AU - Baek, D. H.

AU - Kim, H. J.

AU - Kim, K. S.

AU - Park, H. S.

AU - Lee, J. H.

AU - Yi, J. S.

AU - Choi, B. D.

PY - 2013/2/14

Y1 - 2013/2/14

N2 - The localised back contact method for SiO2/SiN x/SiO2 (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τeff), back surface recombination velocity (Seff) and diffusion length (LD) with the ONO passivated layer rather than with the SiNx single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.

AB - The localised back contact method for SiO2/SiN x/SiO2 (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τeff), back surface recombination velocity (Seff) and diffusion length (LD) with the ONO passivated layer rather than with the SiNx single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.

UR - https://www.scopus.com/pages/publications/84877724462

U2 - 10.1049/el.2012.4465

DO - 10.1049/el.2012.4465

M3 - Article

AN - SCOPUS:84877724462

SN - 0013-5194

VL - 49

SP - 300

EP - 302

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Localised back contact to ONO passivated c-Si solar cells using laser fired contact method

Abstract

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