Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

Hyoungsub Kim; Chi On Chui; Krishna C. Saraswat; Paul C. McIntyre

doi:10.1063/1.1613031

Local epitaxial growth of ZrO₂ on Ge (100) substrates by atomic layer epitaxy

Hyoungsub Kim
, Chi On Chui
, Krishna C. Saraswat
, Paul C. McIntyre

Stanford University

Research output: Contribution to journal › Article › peer-review

146 Scopus citations

Abstract

A study was performed on local epitaxial growth of ZrO₂ on Ge (100) substrates by atomic layer epitaxy. Due to the high density of interface states, large hysteresis and high frequency dispersion were observed in capacitance-voltage measurements. A low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density.

Original language	English
Pages (from-to)	2647-2649
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	13
DOIs	https://doi.org/10.1063/1.1613031
State	Published - 29 Sep 2003
Externally published	Yes

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10.1063/1.1613031

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title = "Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy",

abstract = "A study was performed on local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy. Due to the high density of interface states, large hysteresis and high frequency dispersion were observed in capacitance-voltage measurements. A low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density.",

author = "Hyoungsub Kim and Chui, \{Chi On\} and Saraswat, \{Krishna C.\} and McIntyre, \{Paul C.\}",

year = "2003",

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journal = "Applied Physics Letters",

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AU - Kim, Hyoungsub

AU - Chui, Chi On

AU - Saraswat, Krishna C.

AU - McIntyre, Paul C.

PY - 2003/9/29

Y1 - 2003/9/29

N2 - A study was performed on local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy. Due to the high density of interface states, large hysteresis and high frequency dispersion were observed in capacitance-voltage measurements. A low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density.

AB - A study was performed on local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy. Due to the high density of interface states, large hysteresis and high frequency dispersion were observed in capacitance-voltage measurements. A low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density.

UR - https://www.scopus.com/pages/publications/0142057279

U2 - 10.1063/1.1613031

DO - 10.1063/1.1613031

M3 - Article

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VL - 83

SP - 2647

EP - 2649

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Local epitaxial growth of ZrO₂ on Ge (100) substrates by atomic layer epitaxy

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