Line Ratio of Optical Emission Spectroscopy Peaks for Predicting Deposition Rate and Refractive Index of Silicon Nitride in Plasma Enhanced Chemical Vapor Deposition Processes

Youngju Ko; Hyeonjin Choi; Jinmyeong Kim; Namgun Kim; Heeyeop Chae

doi:10.1002/ppap.70040

Line Ratio of Optical Emission Spectroscopy Peaks for Predicting Deposition Rate and Refractive Index of Silicon Nitride in Plasma Enhanced Chemical Vapor Deposition Processes

Youngju Ko
, Hyeonjin Choi
, Jinmyeong Kim
, Namgun Kim
, Heeyeop Chae

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, optical emission spectroscopy (OES) was used to predict the deposition rate and refractive index of silicon nitride (SiN_x) deposited using trisilylamine (TSA), NH₃ and N₂ in plasma enhanced chemical vapor deposition (PECVD). The line ratio of (Formula presented.) strongly correlated with deposition rate (R² = 0.85, MAPE = 3.66%). The line ratios of (Formula presented.) and (Formula presented.) correlated with refractive index, showing high accuracy (R² = 0.95, MAPE = 0.27%). These ratios effectively predict deposition rate and refractive index by reflecting electron temperature and radical density variations.

Original language	English
Article number	70040
Journal	Plasma Processes and Polymers
Volume	22
Issue number	8
DOIs	https://doi.org/10.1002/ppap.70040
State	Published - Aug 2025

Keywords

deposition rate
optical emission spectroscopy (OES)
refractive index
regression model
silicon nitride (SiN)

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10.1002/ppap.70040

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title = "Line Ratio of Optical Emission Spectroscopy Peaks for Predicting Deposition Rate and Refractive Index of Silicon Nitride in Plasma Enhanced Chemical Vapor Deposition Processes",

abstract = "In this study, optical emission spectroscopy (OES) was used to predict the deposition rate and refractive index of silicon nitride (SiNx) deposited using trisilylamine (TSA), NH3 and N2 in plasma enhanced chemical vapor deposition (PECVD). The line ratio of (Formula presented.) strongly correlated with deposition rate (R2 = 0.85, MAPE = 3.66\%). The line ratios of (Formula presented.) and (Formula presented.) correlated with refractive index, showing high accuracy (R2 = 0.95, MAPE = 0.27\%). These ratios effectively predict deposition rate and refractive index by reflecting electron temperature and radical density variations.",

keywords = "deposition rate, optical emission spectroscopy (OES), refractive index, regression model, silicon nitride (SiN)",

author = "Youngju Ko and Hyeonjin Choi and Jinmyeong Kim and Namgun Kim and Heeyeop Chae",

note = "Publisher Copyright: {\textcopyright} 2025 The Author(s). Plasma Processes and Polymers published by Wiley-VCH GmbH.",

year = "2025",

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doi = "10.1002/ppap.70040",

language = "English",

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journal = "Plasma Processes and Polymers",

issn = "1612-8850",

publisher = "Wiley-VCH Verlag",

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TY - JOUR

T1 - Line Ratio of Optical Emission Spectroscopy Peaks for Predicting Deposition Rate and Refractive Index of Silicon Nitride in Plasma Enhanced Chemical Vapor Deposition Processes

AU - Ko, Youngju

AU - Choi, Hyeonjin

AU - Kim, Jinmyeong

AU - Kim, Namgun

AU - Chae, Heeyeop

PY - 2025/8

Y1 - 2025/8

N2 - In this study, optical emission spectroscopy (OES) was used to predict the deposition rate and refractive index of silicon nitride (SiNx) deposited using trisilylamine (TSA), NH3 and N2 in plasma enhanced chemical vapor deposition (PECVD). The line ratio of (Formula presented.) strongly correlated with deposition rate (R2 = 0.85, MAPE = 3.66%). The line ratios of (Formula presented.) and (Formula presented.) correlated with refractive index, showing high accuracy (R2 = 0.95, MAPE = 0.27%). These ratios effectively predict deposition rate and refractive index by reflecting electron temperature and radical density variations.

AB - In this study, optical emission spectroscopy (OES) was used to predict the deposition rate and refractive index of silicon nitride (SiNx) deposited using trisilylamine (TSA), NH3 and N2 in plasma enhanced chemical vapor deposition (PECVD). The line ratio of (Formula presented.) strongly correlated with deposition rate (R2 = 0.85, MAPE = 3.66%). The line ratios of (Formula presented.) and (Formula presented.) correlated with refractive index, showing high accuracy (R2 = 0.95, MAPE = 0.27%). These ratios effectively predict deposition rate and refractive index by reflecting electron temperature and radical density variations.

KW - deposition rate

KW - optical emission spectroscopy (OES)

KW - refractive index

KW - regression model

KW - silicon nitride (SiN)

UR - https://www.scopus.com/pages/publications/105005227938

U2 - 10.1002/ppap.70040

DO - 10.1002/ppap.70040

M3 - Article

AN - SCOPUS:105005227938

SN - 1612-8850

VL - 22

JO - Plasma Processes and Polymers

JF - Plasma Processes and Polymers

IS - 8

M1 - 70040

ER -

Line Ratio of Optical Emission Spectroscopy Peaks for Predicting Deposition Rate and Refractive Index of Silicon Nitride in Plasma Enhanced Chemical Vapor Deposition Processes

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Keywords

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