Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

Seung Jae Baik; Koeng Su Lim; Wonsup Choi; Hyunjun Yoo; Jang Sik Lee; Hyunjung Shin

doi:10.1039/c1nr10104h

Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

Seung Jae Baik
, Koeng Su Lim
, Wonsup Choi
, Hyunjun Yoo
, Jang Sik Lee
, Hyunjung Shin

Korea Advanced Institute of Science and Technology
Kookmin University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (ρ_m) and the lateral spreading distance (Δ_s), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.

Original language	English
Pages (from-to)	2560-2565
Number of pages	6
Journal	Nanoscale
Volume	3
Issue number	6
DOIs	https://doi.org/10.1039/c1nr10104h
State	Published - 8 Jun 2011
Externally published	Yes

Access to Document

10.1039/c1nr10104h

Cite this

@article{d31c732a2f2148609143b49de6a19d76,

title = "Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy",

abstract = "Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (ρm) and the lateral spreading distance (Δs), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.",

author = "Baik, \{Seung Jae\} and Lim, \{Koeng Su\} and Wonsup Choi and Hyunjun Yoo and Lee, \{Jang Sik\} and Hyunjung Shin",

year = "2011",

month = jun,

day = "8",

doi = "10.1039/c1nr10104h",

language = "English",

volume = "3",

pages = "2560--2565",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "6",

}

TY - JOUR

T1 - Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

AU - Baik, Seung Jae

AU - Lim, Koeng Su

AU - Choi, Wonsup

AU - Yoo, Hyunjun

AU - Lee, Jang Sik

AU - Shin, Hyunjung

PY - 2011/6/8

Y1 - 2011/6/8

N2 - Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (ρm) and the lateral spreading distance (Δs), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.

AB - Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (ρm) and the lateral spreading distance (Δs), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.

UR - https://www.scopus.com/pages/publications/85006170534

U2 - 10.1039/c1nr10104h

DO - 10.1039/c1nr10104h

M3 - Article

AN - SCOPUS:85006170534

SN - 2040-3364

VL - 3

SP - 2560

EP - 2565

JO - Nanoscale

JF - Nanoscale

IS - 6

ER -

Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this