Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

Ju Hyung Nam; Sabri Alkis; Donguk Nam; Farzaneh Afshinmanesh; Jaewoo Shim; Jin Hong Park; Mark Brongersma; Ali Kemal Okyay; Theodore I. Kamins; Krishna Saraswat

doi:10.1016/j.jcrysgro.2014.11.004

Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

Ju Hyung Nam
, Sabri Alkis
, Donguk Nam
, Farzaneh Afshinmanesh
, Jaewoo Shim
, Jin Hong Park
, Mark Brongersma
, Ali Kemal Okyay
, Theodore I. Kamins
, Krishna Saraswat

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO₂) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO₂ as growth mask. Lateral overgrowth of Ge crystal covers SiO₂ surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO₂. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.

Original language	English
Pages (from-to)	21-27
Number of pages	7
Journal	Journal of Crystal Growth
Volume	416
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.11.004
State	Published - 15 Apr 2015

Keywords

A1. Defects
A3. Chemical vapor deposition process
B2. Semiconducting germanium
B3. Infrared devices

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10.1016/j.jcrysgro.2014.11.004

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title = "Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon",

abstract = "A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.",

keywords = "A1. Defects, A3. Chemical vapor deposition process, B2. Semiconducting germanium, B3. Infrared devices",

author = "\{Hyung Nam\}, Ju and Sabri Alkis and Donguk Nam and Farzaneh Afshinmanesh and Jaewoo Shim and Park, \{Jin Hong\} and Mark Brongersma and Okyay, \{Ali Kemal\} and Kamins, \{Theodore I.\} and Krishna Saraswat",

year = "2015",

month = apr,

day = "15",

doi = "10.1016/j.jcrysgro.2014.11.004",

language = "English",

volume = "416",

pages = "21--27",

journal = "Journal of Crystal Growth",

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T1 - Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

AU - Hyung Nam, Ju

AU - Alkis, Sabri

AU - Nam, Donguk

AU - Afshinmanesh, Farzaneh

AU - Shim, Jaewoo

AU - Park, Jin Hong

AU - Brongersma, Mark

AU - Okyay, Ali Kemal

AU - Kamins, Theodore I.

AU - Saraswat, Krishna

PY - 2015/4/15

Y1 - 2015/4/15

N2 - A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.

AB - A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.

KW - A1. Defects

KW - A3. Chemical vapor deposition process

KW - B2. Semiconducting germanium

KW - B3. Infrared devices

UR - https://www.scopus.com/pages/publications/84922266730

U2 - 10.1016/j.jcrysgro.2014.11.004

DO - 10.1016/j.jcrysgro.2014.11.004

M3 - Article

AN - SCOPUS:84922266730

SN - 0022-0248

VL - 416

SP - 21

EP - 27

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

Abstract

Keywords

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