Laser annealing on Ti electrode: Impact on TiHf O2 Si O2 n-type MOSFET

Low-thermal-budget processes are required for Ti electrode in the present gate-first n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) applications because of its thermal stability problem. In this article, the effects of laser annealing on Ti electrodes (in Hf O2 Si O2 nMOSFET) are discussed. The processes of Ti electrode degradation and Hf O2 crystallization are optimized effectively. Hf O2 Si O2 nMOSFET with Ti electrode displayed an effective work function (∼4.26 eV), corresponding to the conduction bandedge and an equivalent oxide thickness of 11.7 Å by controlling the laser annealing.