Large resistive switching in ferroelectric BiFeO3 nano-island based switchable diodes

Sahwan Hong; Taekjib Choi; Ji Hoon Jeon; Yunseok Kim; Hosang Lee; Ho Young Joo; Inrok Hwang; Jin Soo Kim; Sung Oong Kang; Sergei V. Kalinin; Bae Ho Park

doi:10.1002/adma.201204839

Large resistive switching in ferroelectric BiFeO₃ nano-island based switchable diodes

Sahwan Hong
, Taekjib Choi
, Ji Hoon Jeon
, Yunseok Kim
, Hosang Lee
, Ho Young Joo
, Inrok Hwang
, Jin Soo Kim
, Sung Oong Kang
, Sergei V. Kalinin
, Bae Ho Park

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

214 Scopus citations

Abstract

Comparison between piezoelectric force microscopy images and current-voltage data consecutively obtained using conductive atomic force microscopy below transition voltages for a highly oriented ferroelectric BiFeO₃ nano-island confirms that ferroelectric polarization reversal induces transitions of forward-direction, and thus down- and up-polarization is accompanied by positive- and negative-forward diode-like behavior, respectively.

Original language	English
Pages (from-to)	2339-2343
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	16
DOIs	https://doi.org/10.1002/adma.201204839
State	Published - 24 Apr 2013

Keywords

ferroelectric polarization
nano-islands
non-volatile memory
resistive switching
switchable diode

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10.1002/adma.201204839

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@article{013122ef997b40ecab6fafbfddf58a28,

title = "Large resistive switching in ferroelectric BiFeO3 nano-island based switchable diodes",

abstract = "Comparison between piezoelectric force microscopy images and current-voltage data consecutively obtained using conductive atomic force microscopy below transition voltages for a highly oriented ferroelectric BiFeO3 nano-island confirms that ferroelectric polarization reversal induces transitions of forward-direction, and thus down- and up-polarization is accompanied by positive- and negative-forward diode-like behavior, respectively.",

keywords = "ferroelectric polarization, nano-islands, non-volatile memory, resistive switching, switchable diode",

author = "Sahwan Hong and Taekjib Choi and Jeon, \{Ji Hoon\} and Yunseok Kim and Hosang Lee and Joo, \{Ho Young\} and Inrok Hwang and Kim, \{Jin Soo\} and Kang, \{Sung Oong\} and Kalinin, \{Sergei V.\} and Park, \{Bae Ho\}",

year = "2013",

month = apr,

day = "24",

doi = "10.1002/adma.201204839",

language = "English",

volume = "25",

pages = "2339--2343",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "16",

}

TY - JOUR

T1 - Large resistive switching in ferroelectric BiFeO3 nano-island based switchable diodes

AU - Hong, Sahwan

AU - Choi, Taekjib

AU - Jeon, Ji Hoon

AU - Kim, Yunseok

AU - Lee, Hosang

AU - Joo, Ho Young

AU - Hwang, Inrok

AU - Kim, Jin Soo

AU - Kang, Sung Oong

AU - Kalinin, Sergei V.

AU - Park, Bae Ho

PY - 2013/4/24

Y1 - 2013/4/24

N2 - Comparison between piezoelectric force microscopy images and current-voltage data consecutively obtained using conductive atomic force microscopy below transition voltages for a highly oriented ferroelectric BiFeO3 nano-island confirms that ferroelectric polarization reversal induces transitions of forward-direction, and thus down- and up-polarization is accompanied by positive- and negative-forward diode-like behavior, respectively.

AB - Comparison between piezoelectric force microscopy images and current-voltage data consecutively obtained using conductive atomic force microscopy below transition voltages for a highly oriented ferroelectric BiFeO3 nano-island confirms that ferroelectric polarization reversal induces transitions of forward-direction, and thus down- and up-polarization is accompanied by positive- and negative-forward diode-like behavior, respectively.

KW - ferroelectric polarization

KW - nano-islands

KW - non-volatile memory

KW - resistive switching

KW - switchable diode

UR - https://www.scopus.com/pages/publications/84876483893

U2 - 10.1002/adma.201204839

DO - 10.1002/adma.201204839

M3 - Article

AN - SCOPUS:84876483893

SN - 0935-9648

VL - 25

SP - 2339

EP - 2343

JO - Advanced Materials

JF - Advanced Materials

IS - 16

ER -

Large resistive switching in ferroelectric BiFeO₃ nano-island based switchable diodes

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Keywords

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