Large area mono-crystalline silicon solar cell using SOD

U. Gangopadhyay; S. Park; K. Kim; J. Park; D. Kim; J. Yi

Large area mono-crystalline silicon solar cell using SOD

U. Gangopadhyay, S. Park, K. Kim, J. Park, D. Kim, J. Yi

Department of Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The process parameters for the fabrication of large area mono-crystalline silicon solar cells using Spin-on doping (SOD) and IR lamp furnace annealing have been investigated. The removal of the spin-on glass residuals formed during IR lamp furnace annealing which generate recombination centres, high resistances, and increased leakage current thereby lowering the solar cell efficiency is key issue of this paper. We have applied a novel chemical treatment to remove the organic residual using hot HCl treatment. This novel chemical treatment improves greatly the solar cell leakage current leading to increased shunt resistance and also the efficiency of the mono-crystalline solar cells. This paper reports on the successful fabrication of 13.1% efficiency large area (103mm×103mm) mono-crystalline silicon solar cells with PECVD silicon nitride antireflection coating.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	1431-1434
Number of pages	4
State	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	B

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Gangopadhyay, U., Park, S., Kim, K., Park, J., Kim, D., & Yi, J. (2003). Large area mono-crystalline silicon solar cell using SOD. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 1431-1434). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

@inproceedings{32f75d93da604888a8702cb8d54f264c,

title = "Large area mono-crystalline silicon solar cell using SOD",

abstract = "The process parameters for the fabrication of large area mono-crystalline silicon solar cells using Spin-on doping (SOD) and IR lamp furnace annealing have been investigated. The removal of the spin-on glass residuals formed during IR lamp furnace annealing which generate recombination centres, high resistances, and increased leakage current thereby lowering the solar cell efficiency is key issue of this paper. We have applied a novel chemical treatment to remove the organic residual using hot HCl treatment. This novel chemical treatment improves greatly the solar cell leakage current leading to increased shunt resistance and also the efficiency of the mono-crystalline solar cells. This paper reports on the successful fabrication of 13.1\% efficiency large area (103mm×103mm) mono-crystalline silicon solar cells with PECVD silicon nitride antireflection coating.",

author = "U. Gangopadhyay and S. Park and K. Kim and J. Park and D. Kim and J. Yi",

year = "2003",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "1431--1434",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Gangopadhyay, U, Park, S, Kim, K, Park, J, Kim, D & Yi, J 2003, Large area mono-crystalline silicon solar cell using SOD. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. B, pp. 1431-1434, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03.

Large area mono-crystalline silicon solar cell using SOD. / Gangopadhyay, U.; Park, S.; Kim, K. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1431-1434 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Large area mono-crystalline silicon solar cell using SOD

AU - Gangopadhyay, U.

AU - Park, S.

AU - Kim, K.

AU - Park, J.

AU - Kim, D.

AU - Yi, J.

PY - 2003

Y1 - 2003

N2 - The process parameters for the fabrication of large area mono-crystalline silicon solar cells using Spin-on doping (SOD) and IR lamp furnace annealing have been investigated. The removal of the spin-on glass residuals formed during IR lamp furnace annealing which generate recombination centres, high resistances, and increased leakage current thereby lowering the solar cell efficiency is key issue of this paper. We have applied a novel chemical treatment to remove the organic residual using hot HCl treatment. This novel chemical treatment improves greatly the solar cell leakage current leading to increased shunt resistance and also the efficiency of the mono-crystalline solar cells. This paper reports on the successful fabrication of 13.1% efficiency large area (103mm×103mm) mono-crystalline silicon solar cells with PECVD silicon nitride antireflection coating.

AB - The process parameters for the fabrication of large area mono-crystalline silicon solar cells using Spin-on doping (SOD) and IR lamp furnace annealing have been investigated. The removal of the spin-on glass residuals formed during IR lamp furnace annealing which generate recombination centres, high resistances, and increased leakage current thereby lowering the solar cell efficiency is key issue of this paper. We have applied a novel chemical treatment to remove the organic residual using hot HCl treatment. This novel chemical treatment improves greatly the solar cell leakage current leading to increased shunt resistance and also the efficiency of the mono-crystalline solar cells. This paper reports on the successful fabrication of 13.1% efficiency large area (103mm×103mm) mono-crystalline silicon solar cells with PECVD silicon nitride antireflection coating.

UR - https://www.scopus.com/pages/publications/6344226704

M3 - Conference contribution

AN - SCOPUS:6344226704

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 1431

EP - 1434

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Large area mono-crystalline silicon solar cell using SOD

Abstract

Publication series

Conference

UN SDGs

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