LaAlOx/Al2O3 gate insulator for amorphous InGaZnO TFTs to suppress permittivity scattering of lanthanum oxide

Won Young Kim; Yuelin Chen; Sung Ho Noh; Yong Sang Kim

LaAlO_x/Al₂O₃ gate insulator for amorphous InGaZnO TFTs to suppress permittivity scattering of lanthanum oxide

Won Young Kim
, Yuelin Chen
, Sung Ho Noh
, Yong Sang Kim

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Although lanthanum oxide has a high dielectric constant, it is not suitable as a gate insulator for TFTs due to its hygroscopic property. To suppress this, we propose a fabrication of a LaAlO_x/Al₂O₃ gate insulator by aluminum doping and adding Al₂O₃ barrier on lanthanum oxide.

Original language	English
Pages (from-to)	238-240
Number of pages	3
Journal	Proceedings of the International Display Workshops
Volume	27
State	Published - 9 Dec 2021
Externally published	Yes
Event	27th International Display Workshops, IDW 2020 - Virtual, Online Duration: 9 Dec 2020 → 11 Dec 2020

Keywords

A-IGZO TFTs
High-k
LaAlOx/Al2O3

Cite this

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title = "LaAlOx/Al2O3 gate insulator for amorphous InGaZnO TFTs to suppress permittivity scattering of lanthanum oxide",

abstract = "Although lanthanum oxide has a high dielectric constant, it is not suitable as a gate insulator for TFTs due to its hygroscopic property. To suppress this, we propose a fabrication of a LaAlOx/Al2O3 gate insulator by aluminum doping and adding Al2O3 barrier on lanthanum oxide.",

keywords = "A-IGZO TFTs, High-k, LaAlOx/Al2O3",

author = "Kim, \{Won Young\} and Yuelin Chen and Noh, \{Sung Ho\} and Kim, \{Yong Sang\}",

note = "Publisher Copyright: {\textcopyright} 2020 ITE and SID.; 27th International Display Workshops, IDW 2020 ; Conference date: 09-12-2020 Through 11-12-2020",

year = "2021",

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T1 - LaAlOx/Al2O3 gate insulator for amorphous InGaZnO TFTs to suppress permittivity scattering of lanthanum oxide

AU - Kim, Won Young

AU - Chen, Yuelin

AU - Noh, Sung Ho

AU - Kim, Yong Sang

PY - 2021/12/9

Y1 - 2021/12/9

N2 - Although lanthanum oxide has a high dielectric constant, it is not suitable as a gate insulator for TFTs due to its hygroscopic property. To suppress this, we propose a fabrication of a LaAlOx/Al2O3 gate insulator by aluminum doping and adding Al2O3 barrier on lanthanum oxide.

AB - Although lanthanum oxide has a high dielectric constant, it is not suitable as a gate insulator for TFTs due to its hygroscopic property. To suppress this, we propose a fabrication of a LaAlOx/Al2O3 gate insulator by aluminum doping and adding Al2O3 barrier on lanthanum oxide.

KW - A-IGZO TFTs

KW - High-k

KW - LaAlOx/Al2O3

UR - https://www.scopus.com/pages/publications/85119953784

M3 - Conference article

AN - SCOPUS:85119953784

SN - 1883-2490

VL - 27

SP - 238

EP - 240

JO - Proceedings of the International Display Workshops

JF - Proceedings of the International Display Workshops

T2 - 27th International Display Workshops, IDW 2020

Y2 - 9 December 2020 through 11 December 2020

ER -

LaAlO_x/Al₂O₃ gate insulator for amorphous InGaZnO TFTs to suppress permittivity scattering of lanthanum oxide

Abstract

Keywords

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