Kinetic modeling of temperature dependence of TiCl4 and NH 3 surface reaction in trap systems for CVD reactors

Changhyun Pang; Donghun Jeong; Heeyeop Chae; Seungil Lee; Che Hoo Cho

doi:10.1021/ie800729y

Kinetic modeling of temperature dependence of TiCl₄ and NH ₃ surface reaction in trap systems for CVD reactors

Changhyun Pang, Donghun Jeong, Heeyeop Chae, Seungil Lee, Che Hoo Cho

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl₄(NH₃) ₂ is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical formation of TiCl₄(NH₃)₂ in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120°C. The deposition rate of TiCl₄(NH₃)₂ is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl ₄(NH₃)₂ is surface-reaction-controlled.

Original language	English
Pages (from-to)	1353-1356
Number of pages	4
Journal	Industrial and Engineering Chemistry Research
Volume	48
Issue number	3
DOIs	https://doi.org/10.1021/ie800729y
State	Published - 4 Feb 2009

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title = "Kinetic modeling of temperature dependence of TiCl4 and NH 3 surface reaction in trap systems for CVD reactors",

abstract = "The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl4(NH3) 2 is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical formation of TiCl4(NH3)2 in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120°C. The deposition rate of TiCl4(NH3)2 is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl 4(NH3)2 is surface-reaction-controlled.",

author = "Changhyun Pang and Donghun Jeong and Heeyeop Chae and Seungil Lee and Cho, \{Che Hoo\}",

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T1 - Kinetic modeling of temperature dependence of TiCl4 and NH 3 surface reaction in trap systems for CVD reactors

AU - Pang, Changhyun

AU - Jeong, Donghun

AU - Chae, Heeyeop

AU - Lee, Seungil

AU - Cho, Che Hoo

PY - 2009/2/4

Y1 - 2009/2/4

N2 - The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl4(NH3) 2 is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical formation of TiCl4(NH3)2 in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120°C. The deposition rate of TiCl4(NH3)2 is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl 4(NH3)2 is surface-reaction-controlled.

AB - The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl4(NH3) 2 is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical formation of TiCl4(NH3)2 in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120°C. The deposition rate of TiCl4(NH3)2 is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl 4(NH3)2 is surface-reaction-controlled.

UR - https://www.scopus.com/pages/publications/61549141648

U2 - 10.1021/ie800729y

DO - 10.1021/ie800729y

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EP - 1356

JO - Industrial and Engineering Chemistry Research

JF - Industrial and Engineering Chemistry Research

IS - 3

ER -

Kinetic modeling of temperature dependence of TiCl₄ and NH ₃ surface reaction in trap systems for CVD reactors

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