Investigation on indium concentration dependence of solution processed indium tin oxide thin film transistors

C. H. Jung; J. Y. Lee; L. S. Pu; K. S. Lee; D. H. Yoon

doi:10.1016/j.tsf.2011.10.187

Investigation on indium concentration dependence of solution processed indium tin oxide thin film transistors

C. H. Jung
, J. Y. Lee
, L. S. Pu
, K. S. Lee
, D. H. Yoon

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (μ_FE of 3.0 cm² V ^{- 1} s^{- 1}, V_th of 2.0 V, and S value of 0.4 V/decade) at In:Sn = 5:1.

Original language	English
Pages (from-to)	4726-4729
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2011.10.187
State	Published - 1 May 2012

Keywords

Indium tin oxide
Mobility
Solution process
Thin film transistor

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10.1016/j.tsf.2011.10.187

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title = "Investigation on indium concentration dependence of solution processed indium tin oxide thin film transistors",

abstract = "The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (μFE of 3.0 cm2 V - 1 s- 1, Vth of 2.0 V, and S value of 0.4 V/decade) at In:Sn = 5:1.",

keywords = "Indium tin oxide, Mobility, Solution process, Thin film transistor",

author = "Jung, \{C. H.\} and Lee, \{J. Y.\} and Pu, \{L. S.\} and Lee, \{K. S.\} and Yoon, \{D. H.\}",

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doi = "10.1016/j.tsf.2011.10.187",

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T1 - Investigation on indium concentration dependence of solution processed indium tin oxide thin film transistors

AU - Jung, C. H.

AU - Lee, J. Y.

AU - Pu, L. S.

AU - Lee, K. S.

AU - Yoon, D. H.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (μFE of 3.0 cm2 V - 1 s- 1, Vth of 2.0 V, and S value of 0.4 V/decade) at In:Sn = 5:1.

AB - The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (μFE of 3.0 cm2 V - 1 s- 1, Vth of 2.0 V, and S value of 0.4 V/decade) at In:Sn = 5:1.

KW - Indium tin oxide

KW - Mobility

KW - Solution process

KW - Thin film transistor

UR - https://www.scopus.com/pages/publications/84862789842

U2 - 10.1016/j.tsf.2011.10.187

DO - 10.1016/j.tsf.2011.10.187

M3 - Article

AN - SCOPUS:84862789842

SN - 0040-6090

VL - 520

SP - 4726

EP - 4729

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Investigation on indium concentration dependence of solution processed indium tin oxide thin film transistors

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