Abstract
In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measurement results, we observed that the thermal noise model for the long-channel MOSFETs does not always underestimate the short-channel thermal noise.
| Original language | English |
|---|---|
| Pages (from-to) | 225-231 |
| Number of pages | 7 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 10 |
| Issue number | 3 |
| DOIs | |
| State | Published - Sep 2010 |
| Externally published | Yes |
Keywords
- Channel thermal noise
- Nanoscale MOSFETs
- Noise modeling
- Short channel effects
- Thermal noise factor
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