Abstract
A large area inductively coupled plasma source with an internal linear-type antenna was operated in dual frequency mode (2 MHz/13.56 MHz), and the electrical/plasma characteristics of the ICP source were examined as a function of the relative rf power ratio. When the source was operated in single frequency mode (13.56 MHz only), approximately 8.5% plasma uniformity was observed at 5 kW of 13.56 MHz rf power for the substrate size of 880 mm × 660 mm. The plasma uniformity improved with increasing rf power. However, a further improvement in plasma uniformity to approximately 6.3% could be obtained using the dual frequency mode by applying 0.9 kW of 2 MHz rf power in addition to 5 kW of 13.56 MHz. For 15 mTorr Ar, the plasma density at a dual frequency rf power of 0.9 kW 2 MHz/5 kW 13.56 MHz was 1.6 × 1011/cm3 and the electron temperature was approximately 3 eV. The addition and increase in 2 MHz rf power to the 13.56 MHz power increased the plasma density without increasing the electron temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 823-827 |
| Number of pages | 5 |
| Journal | Vacuum |
| Volume | 84 |
| Issue number | 6 |
| DOIs | |
| State | Published - 4 Feb 2010 |
Keywords
- Dual freqquency
- ICP
- Internal antenna
- Plasma
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