Investigation of Radiation Effects on Multichannel Nanosheet-FETs, Forksheet-FETs, and Complementary-FETs

The radiation effects of alpha particles on nanosheet-FET (NSH-FET), forksheet-FET (FSH-FET), and complementary-FET (C-FET) were analyzed simultaneously for the first time using 3-D technology computer-aided design (TCAD) simulations. The study involved a concurrent analysis of nMOS and pMOS devices to observe the mechanisms of drain current following particle strikes, assessing the different responses due to structural variations among the three architectures. In the case of FSH-FET, the partially surrounded channel structure resulted in a slightly reduced electron-hole pair (EHP) control compared to NSH-FET, making it more vulnerable to radiation recovery. Additionally, the C-FET, with its stacked nMOS and pMOS structure, exhibited a counteracting interaction between the two MOS devices, leading to a 21.4% reduction in radiation effects compared to NSH-FET. Furthermore, error occurrences in inverter and SRAM cross-coupled latch circuits were compared across the three architectures. Unlike NSH-FET and FSH-FET in SRAM latch, where the voltage level completely flips, the voltage propagation level of the C-FET only deviates by 18.2%. These comparisons of single event transients (SETs) provide insights into the reliability of logic and memory architectures under radiation effects.