Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing

S. C. Kang; C. H. Oh; N. E. Lee; T. K. Kwon

doi:10.1016/j.surfcoat.2004.08.117

Investigation of plasma oxynitridation of Si(001) by NH₃/N₂O/Ar remote plasma processing

S. C. Kang
, C. H. Oh
, N. E. Lee
, T. K. Kwon

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Plasma oxynitridation of Si(001) was carried out by NH₃/N₂O/Ar remote plasma generated from a toroidal-type remote plasma source in a commercial 8-in. plasma-enhanced chemical vapor deposition (PECVD) system. Oxynitridation experiments of Si were performed by varying the NH₃/N₂O/Ar gas flow ratio and plasma exposure time at the substrate temperature of 500 °C. Time evolution of the layer thickness, chemical composition, and bonding characteristics of the silicon oxynitride layers were investigated by various analytical methods including X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and high-resolution transmission electron microscopy (HR-TEM). The results showed a formation of the silicon oxynitride layers with the film thickness of 1.5-2.0 nm and different compositions depending on the experimental conditions. N content incorporated in the silicon oxynitride increases but the growth rate of silicon oxynitride layer decreases with increasing NH₃/N₂O gas flow ratio.

Original language	English
Pages (from-to)	350-355
Number of pages	6
Journal	Surface and Coatings Technology
Volume	193
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2004.08.117
State	Published - 1 Apr 2005

Keywords

Plasma oxynitridation
Remote plasma
Silicon oxynitride

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10.1016/j.surfcoat.2004.08.117

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title = "Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing",

abstract = "Plasma oxynitridation of Si(001) was carried out by NH3/N2O/Ar remote plasma generated from a toroidal-type remote plasma source in a commercial 8-in. plasma-enhanced chemical vapor deposition (PECVD) system. Oxynitridation experiments of Si were performed by varying the NH3/N2O/Ar gas flow ratio and plasma exposure time at the substrate temperature of 500 °C. Time evolution of the layer thickness, chemical composition, and bonding characteristics of the silicon oxynitride layers were investigated by various analytical methods including X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and high-resolution transmission electron microscopy (HR-TEM). The results showed a formation of the silicon oxynitride layers with the film thickness of 1.5-2.0 nm and different compositions depending on the experimental conditions. N content incorporated in the silicon oxynitride increases but the growth rate of silicon oxynitride layer decreases with increasing NH3/N2O gas flow ratio.",

keywords = "Plasma oxynitridation, Remote plasma, Silicon oxynitride",

author = "Kang, \{S. C.\} and Oh, \{C. H.\} and Lee, \{N. E.\} and Kwon, \{T. K.\}",

year = "2005",

month = apr,

day = "1",

doi = "10.1016/j.surfcoat.2004.08.117",

language = "English",

volume = "193",

pages = "350--355",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

number = "1-3 SPEC. ISS.",

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TY - JOUR

T1 - Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing

AU - Kang, S. C.

AU - Oh, C. H.

AU - Lee, N. E.

AU - Kwon, T. K.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - Plasma oxynitridation of Si(001) was carried out by NH3/N2O/Ar remote plasma generated from a toroidal-type remote plasma source in a commercial 8-in. plasma-enhanced chemical vapor deposition (PECVD) system. Oxynitridation experiments of Si were performed by varying the NH3/N2O/Ar gas flow ratio and plasma exposure time at the substrate temperature of 500 °C. Time evolution of the layer thickness, chemical composition, and bonding characteristics of the silicon oxynitride layers were investigated by various analytical methods including X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and high-resolution transmission electron microscopy (HR-TEM). The results showed a formation of the silicon oxynitride layers with the film thickness of 1.5-2.0 nm and different compositions depending on the experimental conditions. N content incorporated in the silicon oxynitride increases but the growth rate of silicon oxynitride layer decreases with increasing NH3/N2O gas flow ratio.

AB - Plasma oxynitridation of Si(001) was carried out by NH3/N2O/Ar remote plasma generated from a toroidal-type remote plasma source in a commercial 8-in. plasma-enhanced chemical vapor deposition (PECVD) system. Oxynitridation experiments of Si were performed by varying the NH3/N2O/Ar gas flow ratio and plasma exposure time at the substrate temperature of 500 °C. Time evolution of the layer thickness, chemical composition, and bonding characteristics of the silicon oxynitride layers were investigated by various analytical methods including X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and high-resolution transmission electron microscopy (HR-TEM). The results showed a formation of the silicon oxynitride layers with the film thickness of 1.5-2.0 nm and different compositions depending on the experimental conditions. N content incorporated in the silicon oxynitride increases but the growth rate of silicon oxynitride layer decreases with increasing NH3/N2O gas flow ratio.

KW - Plasma oxynitridation

KW - Remote plasma

KW - Silicon oxynitride

UR - https://www.scopus.com/pages/publications/13844276653

U2 - 10.1016/j.surfcoat.2004.08.117

DO - 10.1016/j.surfcoat.2004.08.117

M3 - Article

AN - SCOPUS:13844276653

SN - 0257-8972

VL - 193

SP - 350

EP - 355

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 1-3 SPEC. ISS.

ER -

Investigation of plasma oxynitridation of Si(001) by NH₃/N₂O/Ar remote plasma processing

Abstract

Keywords

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