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Investigation of Nanoscale Bonding-Based Complementary FETs
Seung Kyu Kim
, Johyeon Kim
, Kee Won Kwon
,
Jongwook Jeon
Sungkyunkwan University
Samsung
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Engineering
Nanoscale
100%
Field-Effect Transistor
100%
Field Effect Transistor
100%
Nodes
20%
Low-Temperature
20%
Dopants
20%
Interconnects
20%
Operating Frequency
20%
Extreme Condition
20%
External Resistance
20%
Void Growth
20%
Generation Technology
20%
Material Science
Field Effect Transistor
100%
Doping (Additives)
16%
Transistor
16%
Void Growth
16%