Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

Wonjun Shin; Jong Ho Bae; Dongseok Kwon; Ryun Han Koo; Byung Gook Park; Daewoong Kwon; Jong Ho Lee

doi:10.1109/LED.2022.3168797

Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

Wonjun Shin
, Jong Ho Bae
, Dongseok Kwon
, Ryun Han Koo
, Byung Gook Park
, Daewoong Kwon
, Jong Ho Lee

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semicondu- ctor (TiN/HfZrO2/SiO2/n+ Si). In the high-resistance state, 1/f noise increases proportionally to 1/Wα Lβ (α ≅ 1, β > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence onL scaling thanW scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.

Original language	English
Pages (from-to)	958-961
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	6
DOIs	https://doi.org/10.1109/LED.2022.3168797
State	Published - 1 Jun 2022
Externally published	Yes

Keywords

1/f noise
ferroelectric tunnel junction (FTJ)
length
low-frequency noise (LFN)
scaling
width

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10.1109/LED.2022.3168797

Cite this

@article{0455fb07bcfc4835b977c710c133f154,

title = "Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives",

abstract = "We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semicondu- ctor (TiN/HfZrO2/SiO2/n+ Si). In the high-resistance state, 1/f noise increases proportionally to 1/Wα Lβ (α ≅ 1, β > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence onL scaling thanW scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.",

keywords = "1/f noise, ferroelectric tunnel junction (FTJ), length, low-frequency noise (LFN), scaling, width",

author = "Wonjun Shin and Bae, \{Jong Ho\} and Dongseok Kwon and Koo, \{Ryun Han\} and Park, \{Byung Gook\} and Daewoong Kwon and Lee, \{Jong Ho\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

month = jun,

day = "1",

doi = "10.1109/LED.2022.3168797",

language = "English",

volume = "43",

pages = "958--961",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction

T2 - From Conduction Mechanism and Scaling Perspectives

AU - Shin, Wonjun

AU - Bae, Jong Ho

AU - Kwon, Dongseok

AU - Koo, Ryun Han

AU - Park, Byung Gook

AU - Kwon, Daewoong

AU - Lee, Jong Ho

PY - 2022/6/1

Y1 - 2022/6/1

N2 - We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semicondu- ctor (TiN/HfZrO2/SiO2/n+ Si). In the high-resistance state, 1/f noise increases proportionally to 1/Wα Lβ (α ≅ 1, β > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence onL scaling thanW scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.

AB - We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semicondu- ctor (TiN/HfZrO2/SiO2/n+ Si). In the high-resistance state, 1/f noise increases proportionally to 1/Wα Lβ (α ≅ 1, β > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence onL scaling thanW scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.

KW - 1/f noise

KW - ferroelectric tunnel junction (FTJ)

KW - length

KW - low-frequency noise (LFN)

KW - scaling

KW - width

UR - https://www.scopus.com/pages/publications/85128625839

U2 - 10.1109/LED.2022.3168797

DO - 10.1109/LED.2022.3168797

M3 - Article

AN - SCOPUS:85128625839

SN - 0741-3106

VL - 43

SP - 958

EP - 961

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

Abstract

Keywords

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