Investigation of interfacial reaction between Sn-Ag eutectic solder and Au/Ni/Cu/Ti thin film metallization

  • J. Y. Park
  • , C. W. Yang
  • , J. S. Ha
  • , C. U. Kim
  • , E. J. Kwon
  • , S. B. Jung
  • , C. S. Kang

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

This paper reports the formation of intermetallic compounds in Au/Ni/Cu/Ti under-bump-metallization (UBM) structure reacted with Ag-Sn eutectic solder. In this study, UBM is prepared by evaporating Au(500 Å)/Ni(1000 Å)/Cu(7500 Å)/Ti(700 Å) thin films on top of Si substrates. It is then reacted with Ag-Sn eutectic solder at 260°C for various times to induce different stages of the interfacial reaction. Microstructural examination of the interface, using both chemical and crystallographic analysis, indicates that two types of intermetallic compounds are formed during the interfacial reaction. The first phase, formed at the initial stage of the reaction, is predominantly Ni3Sn4. At longer times the Ni3Sn4 phase transforms into (Cu, Ni)6Sn5, probably induced by interdiffusion of Cu and Ni. At this stage, the underlying Cu layer also reacts with Sn and forms the same phase, (Cu, Ni)6Sn5. As a result, the fully reacted interface is found to consist of two intermetallic layers with the same phase but different morphologies.

Original languageEnglish
Article number145
Pages (from-to)1165-1170
Number of pages6
JournalJournal of Electronic Materials
Volume30
Issue number9
DOIs
StatePublished - 2001

Keywords

  • Diffusion
  • Flip chip
  • Intermetallics
  • Ni thin layer
  • UBM

Fingerprint

Dive into the research topics of 'Investigation of interfacial reaction between Sn-Ag eutectic solder and Au/Ni/Cu/Ti thin film metallization'. Together they form a unique fingerprint.

Cite this