TY - JOUR
T1 - Investigation of highly efficient methyl ammonium lead halide perovskite solar cell with non-textured front surface
AU - Iftiquar, S. M.
AU - Kim, Jung Soo
AU - Yi, Junsin
N1 - Publisher Copyright:
© 2017 Elsevier GmbH
PY - 2017/11
Y1 - 2017/11
N2 - High quality methyl ammonium lead iodide (MAPbI3) perovskite material based single junction solar cell was investigated by simulation. We observed a systematic variation in device performance due to a variation in optical absorption of the active layer. By changing thickness of absorber layer from 50 nm to 1000 nm, we obtained power conversion efficiency (PCE) of the photovoltaic devices varying from 7.9% to 21.1%. Its open circuit voltage (Voc) varied from 1.26 V to 1.16 V, short circuit current density (Jsc) varied from 7.56 mA/cm2 to 22.61 mA/cm2 while the fill factor (FF) remained constant at 83% in this variation. Front surface of the solar cell was kept non-textured, however, back reflection of unabsorbed light was used in the analysis. The maximum PCE of 21.1% and Jsc of 22.61 mA/cm2 was observed for the solar cell with 1000 nm absorber layer. The Jsc and device efficiency increases with increased thickness of absorber layer (di). Therefore, higher PCE can be obtained with a thicker absorber layer. However, we identify that, with 94 nm thick absorber layer, the rate of change of PCE is equal to the rate of change of Jsc, due to the thickness variation. In this cell with 94 nm thick absorber layer (Cell-94), the PCE was 11.5%, nearly half of the PCE obtained with 1000 nm absorber layer. In the Cell-94, the diode ideality factor was 2.04, and reverse saturation current density was 6 × 10−13 Amp/cm2.
AB - High quality methyl ammonium lead iodide (MAPbI3) perovskite material based single junction solar cell was investigated by simulation. We observed a systematic variation in device performance due to a variation in optical absorption of the active layer. By changing thickness of absorber layer from 50 nm to 1000 nm, we obtained power conversion efficiency (PCE) of the photovoltaic devices varying from 7.9% to 21.1%. Its open circuit voltage (Voc) varied from 1.26 V to 1.16 V, short circuit current density (Jsc) varied from 7.56 mA/cm2 to 22.61 mA/cm2 while the fill factor (FF) remained constant at 83% in this variation. Front surface of the solar cell was kept non-textured, however, back reflection of unabsorbed light was used in the analysis. The maximum PCE of 21.1% and Jsc of 22.61 mA/cm2 was observed for the solar cell with 1000 nm absorber layer. The Jsc and device efficiency increases with increased thickness of absorber layer (di). Therefore, higher PCE can be obtained with a thicker absorber layer. However, we identify that, with 94 nm thick absorber layer, the rate of change of PCE is equal to the rate of change of Jsc, due to the thickness variation. In this cell with 94 nm thick absorber layer (Cell-94), the PCE was 11.5%, nearly half of the PCE obtained with 1000 nm absorber layer. In the Cell-94, the diode ideality factor was 2.04, and reverse saturation current density was 6 × 10−13 Amp/cm2.
KW - Device efficiency
KW - Methyl ammonium lead halide perovskite
KW - Optical absorption
KW - Solar cell
UR - https://www.scopus.com/pages/publications/85028697559
U2 - 10.1016/j.ijleo.2017.08.141
DO - 10.1016/j.ijleo.2017.08.141
M3 - Article
AN - SCOPUS:85028697559
SN - 0030-4026
VL - 148
SP - 54
EP - 62
JO - Optik
JF - Optik
ER -