Inverted-load network for high-power Doherty amplifier

Sungwook Kwon; Minsu Kim; Sungchan Jung; Jonghyuk Jeong; Kyunghoon Lim; Juho Van; Hanjin Cho; Hyungchul Kim; Wansoo Nah; Youngoo Yang

doi:10.1109/MMM.2008.930680

Department of Electronic and Electrical Engineering

Research output: Contribution to specialist publication › Article

Abstract

The design and implementation of a high-power, high-efficiency inverted Doherty power amplifier (PA) with highly compact load network, is presented. The amplifier is designed and implemented for a wide-band code-division multiple access (WSDMA) base-station applications. A 190 W peak-envelope-power (PEP) laterally diffused metal-oxide-semiconductor (LDMOS) field-effect transistors (FETs) is used to implement the Doherty amplifier. This design can help to achieve a high power-added efficiency (PAE) and an average output power level by using four-carrier down-link WCDMA signals. The Doherty amplifier can be implemented by using conventional and inverted Doherty PAs (IDPAs). The IDPAs uses a combination of an output matching circuit and offset line, while the conventional Doherty amplifies uses a λ/4 line for load modulation. The implementation of IDPA has showed an improved PAE and adjacent channel leakage ratio (ACLR) performance.

Original language	English
Pages	93-98
Number of pages	6
Volume	10
No	1
Specialist publication	IEEE Microwave Magazine
DOIs	https://doi.org/10.1109/MMM.2008.930680
State	Published - Feb 2009

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title = "Inverted-load network for high-power Doherty amplifier",

abstract = "The design and implementation of a high-power, high-efficiency inverted Doherty power amplifier (PA) with highly compact load network, is presented. The amplifier is designed and implemented for a wide-band code-division multiple access (WSDMA) base-station applications. A 190 W peak-envelope-power (PEP) laterally diffused metal-oxide-semiconductor (LDMOS) field-effect transistors (FETs) is used to implement the Doherty amplifier. This design can help to achieve a high power-added efficiency (PAE) and an average output power level by using four-carrier down-link WCDMA signals. The Doherty amplifier can be implemented by using conventional and inverted Doherty PAs (IDPAs). The IDPAs uses a combination of an output matching circuit and offset line, while the conventional Doherty amplifies uses a λ/4 line for load modulation. The implementation of IDPA has showed an improved PAE and adjacent channel leakage ratio (ACLR) performance.",

author = "Sungwook Kwon and Minsu Kim and Sungchan Jung and Jonghyuk Jeong and Kyunghoon Lim and Juho Van and Hanjin Cho and Hyungchul Kim and Wansoo Nah and Youngoo Yang",

year = "2009",

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doi = "10.1109/MMM.2008.930680",

language = "English",

volume = "10",

pages = "93--98",

journal = "IEEE Microwave Magazine",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Kwon, Sungwook

AU - Kim, Minsu

AU - Jung, Sungchan

AU - Jeong, Jonghyuk

AU - Lim, Kyunghoon

AU - Van, Juho

AU - Cho, Hanjin

AU - Kim, Hyungchul

AU - Nah, Wansoo

AU - Yang, Youngoo

PY - 2009/2

Y1 - 2009/2

N2 - The design and implementation of a high-power, high-efficiency inverted Doherty power amplifier (PA) with highly compact load network, is presented. The amplifier is designed and implemented for a wide-band code-division multiple access (WSDMA) base-station applications. A 190 W peak-envelope-power (PEP) laterally diffused metal-oxide-semiconductor (LDMOS) field-effect transistors (FETs) is used to implement the Doherty amplifier. This design can help to achieve a high power-added efficiency (PAE) and an average output power level by using four-carrier down-link WCDMA signals. The Doherty amplifier can be implemented by using conventional and inverted Doherty PAs (IDPAs). The IDPAs uses a combination of an output matching circuit and offset line, while the conventional Doherty amplifies uses a λ/4 line for load modulation. The implementation of IDPA has showed an improved PAE and adjacent channel leakage ratio (ACLR) performance.

AB - The design and implementation of a high-power, high-efficiency inverted Doherty power amplifier (PA) with highly compact load network, is presented. The amplifier is designed and implemented for a wide-band code-division multiple access (WSDMA) base-station applications. A 190 W peak-envelope-power (PEP) laterally diffused metal-oxide-semiconductor (LDMOS) field-effect transistors (FETs) is used to implement the Doherty amplifier. This design can help to achieve a high power-added efficiency (PAE) and an average output power level by using four-carrier down-link WCDMA signals. The Doherty amplifier can be implemented by using conventional and inverted Doherty PAs (IDPAs). The IDPAs uses a combination of an output matching circuit and offset line, while the conventional Doherty amplifies uses a λ/4 line for load modulation. The implementation of IDPA has showed an improved PAE and adjacent channel leakage ratio (ACLR) performance.

UR - https://www.scopus.com/pages/publications/59049097754

U2 - 10.1109/MMM.2008.930680

DO - 10.1109/MMM.2008.930680

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SN - 1527-3342

VL - 10

SP - 93

EP - 98

JO - IEEE Microwave Magazine

JF - IEEE Microwave Magazine

ER -

Inverted-load network for high-power Doherty amplifier

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