Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes

Hyejin Kim; Woosuk Lee; Hyungsuk Moon; Sun Jung Kim; Ho Kyoon Chung; Heeyeop Chae

doi:10.1364/OE.27.0A1287

Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes

Hyejin Kim, Woosuk Lee, Hyungsuk Moon, Sun Jung Kim, Ho Kyoon Chung, Heeyeop Chae

Department of Chemical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A 2,3,4,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) doping interlayer was developed to improve charge imbalance and the efficiency in indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs). The doping layer was coated between a hole injecting layer (HIL) and a hole transport layer (HTL) and successfully diffused with thermal annealing. This doping reduces the hole injection barrier and improves the charge balance of InP-based QLEDs, resulting in enhancement of an external quantum efficiency (EQE) of 3.78% (up from 1.6%) and a power efficiency of 6.41 lm/W (up from 2.77 lm/W). This work shows that F4-TCNQ interlayer doping into both HIL and HTL facilitates hole injection and can provide an efficient solution of improving charge balance in QLED for the device efficiency.

Original language	English
Pages (from-to)	A1287-A1296
Journal	Optics Express
Volume	27
Issue number	16
DOIs	https://doi.org/10.1364/OE.27.0A1287
State	Published - 5 Aug 2019

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title = "Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes",

abstract = "A 2,3,4,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) doping interlayer was developed to improve charge imbalance and the efficiency in indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs). The doping layer was coated between a hole injecting layer (HIL) and a hole transport layer (HTL) and successfully diffused with thermal annealing. This doping reduces the hole injection barrier and improves the charge balance of InP-based QLEDs, resulting in enhancement of an external quantum efficiency (EQE) of 3.78\% (up from 1.6\%) and a power efficiency of 6.41 lm/W (up from 2.77 lm/W). This work shows that F4-TCNQ interlayer doping into both HIL and HTL facilitates hole injection and can provide an efficient solution of improving charge balance in QLED for the device efficiency.",

author = "Hyejin Kim and Woosuk Lee and Hyungsuk Moon and Kim, \{Sun Jung\} and Chung, \{Ho Kyoon\} and Heeyeop Chae",

note = "Publisher Copyright: {\textcopyright} 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement",

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T1 - Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes

AU - Kim, Hyejin

AU - Lee, Woosuk

AU - Moon, Hyungsuk

AU - Kim, Sun Jung

AU - Chung, Ho Kyoon

AU - Chae, Heeyeop

PY - 2019/8/5

Y1 - 2019/8/5

N2 - A 2,3,4,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) doping interlayer was developed to improve charge imbalance and the efficiency in indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs). The doping layer was coated between a hole injecting layer (HIL) and a hole transport layer (HTL) and successfully diffused with thermal annealing. This doping reduces the hole injection barrier and improves the charge balance of InP-based QLEDs, resulting in enhancement of an external quantum efficiency (EQE) of 3.78% (up from 1.6%) and a power efficiency of 6.41 lm/W (up from 2.77 lm/W). This work shows that F4-TCNQ interlayer doping into both HIL and HTL facilitates hole injection and can provide an efficient solution of improving charge balance in QLED for the device efficiency.

AB - A 2,3,4,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) doping interlayer was developed to improve charge imbalance and the efficiency in indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs). The doping layer was coated between a hole injecting layer (HIL) and a hole transport layer (HTL) and successfully diffused with thermal annealing. This doping reduces the hole injection barrier and improves the charge balance of InP-based QLEDs, resulting in enhancement of an external quantum efficiency (EQE) of 3.78% (up from 1.6%) and a power efficiency of 6.41 lm/W (up from 2.77 lm/W). This work shows that F4-TCNQ interlayer doping into both HIL and HTL facilitates hole injection and can provide an efficient solution of improving charge balance in QLED for the device efficiency.

UR - https://www.scopus.com/pages/publications/85070252177

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DO - 10.1364/OE.27.0A1287

M3 - Article

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AN - SCOPUS:85070252177

SN - 1094-4087

VL - 27

SP - A1287-A1296

JO - Optics Express

JF - Optics Express

IS - 16

ER -

Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes

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