Interlayer-assisted stability of germanosilicide for heavily-doped n +-Si0.83Ge0.17 grown by reduced pressure chemical vapor deposition
- A. R. Choi
- , S. S. Choi
- , H. D. Yang
- , S. H. Kim
- , S. H. Lee
- , N. E. Lee
- , K. H. Shim
- Jeonbuk National University
- Electronics and Telecommunications Research Institute
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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