Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor

Y. S. Kang; C. Y. Kim; M. H. Cho; C. H. An; H. Kim; J. H. Seo; C. S. Kim; T. G. Lee; D. H. Ko

doi:10.1149/2.008204esl

Interfacial reactions between HfO ₂ films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH ₃ vapor

Y. S. Kang
, C. Y. Kim
, M. H. Cho
, C. H. An
, H. Kim
, J. H. Seo
, C. S. Kim
, T. G. Lee
, D. H. Ko

Department of Advanced Materials Science and Engineering

Yonsei University
Sungkyunkwan University
Korea Basic Science Institute
Korea Research Institute of Standards and Science

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO ₂InP (001) were investigated as a function of annealing temperature in an NH ₃ ambient. The levels of interfacial oxides of In(PO ₃) ₃ and InPO ₄ were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO ₂InP interface due to chemical reactions between In ₂O ₃ and the NH ₃ vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO ₂ film was found to be suppressed by presence of thick InN layer.

Original language	English
Pages (from-to)	G9-G11
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.008204esl
State	Published - 2012

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title = "Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor",

abstract = "The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.",

author = "Kang, \{Y. S.\} and Kim, \{C. Y.\} and Cho, \{M. H.\} and An, \{C. H.\} and H. Kim and Seo, \{J. H.\} and Kim, \{C. S.\} and Lee, \{T. G.\} and Ko, \{D. H.\}",

year = "2012",

doi = "10.1149/2.008204esl",

language = "English",

volume = "15",

pages = "G9--G11",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor

AU - Kang, Y. S.

AU - Kim, C. Y.

AU - Cho, M. H.

AU - An, C. H.

AU - Kim, H.

AU - Seo, J. H.

AU - Kim, C. S.

AU - Lee, T. G.

AU - Ko, D. H.

PY - 2012

Y1 - 2012

N2 - The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.

AB - The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.

UR - https://www.scopus.com/pages/publications/84863164907

U2 - 10.1149/2.008204esl

DO - 10.1149/2.008204esl

M3 - Article

AN - SCOPUS:84863164907

SN - 1099-0062

VL - 15

SP - G9-G11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Interfacial reactions between HfO ₂ films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH ₃ vapor

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