Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes
- K. S. Kim
- , Y. C. Jang
- , K. J. Kim
- , N. E. Lee
- , S. P. Youn
- , K. J. Roh
- , Y. H. Roh
- Sungkyunkwan University
Research output: Contribution to journal › Article › peer-review
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