Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes

K. S. Kim; Y. C. Jang; K. J. Kim; N. E. Lee; S. P. Youn; K. J. Roh; Y. H. Roh

doi:10.1116/1.1345894

Interface formation and electrical properties of a TiN_x/SiO₂/Si structure for application in gate electrodes

K. S. Kim
, Y. C. Jang
, K. J. Kim
, N. E. Lee
, S. P. Youn
, K. J. Roh
, Y. H. Roh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The interface formation and electrical properties between TiN_x and SiO₂ for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.

Original language	English
Pages (from-to)	1164-1169
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1345894
State	Published - Jul 2001

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title = "Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes",

abstract = "The interface formation and electrical properties between TiNx and SiO2 for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.",

author = "Kim, \{K. S.\} and Jang, \{Y. C.\} and Kim, \{K. J.\} and Lee, \{N. E.\} and Youn, \{S. P.\} and Roh, \{K. J.\} and Roh, \{Y. H.\}",

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AU - Kim, K. S.

AU - Jang, Y. C.

AU - Kim, K. J.

AU - Lee, N. E.

AU - Youn, S. P.

AU - Roh, K. J.

AU - Roh, Y. H.

PY - 2001/7

Y1 - 2001/7

N2 - The interface formation and electrical properties between TiNx and SiO2 for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.

AB - The interface formation and electrical properties between TiNx and SiO2 for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.

UR - https://www.scopus.com/pages/publications/0035394392

U2 - 10.1116/1.1345894

DO - 10.1116/1.1345894

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AN - SCOPUS:0035394392

SN - 0734-2101

VL - 19

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Interface formation and electrical properties of a TiN_x/SiO₂/Si structure for application in gate electrodes

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