Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes

K. S. Kim; Y. C. Jang; K. J. Kim; N. E. Lee; S. P. Youn; K. J. Roh; Y. H. Roh

doi:10.1116/1.1345894

Interface formation and electrical properties of a TiN_x/SiO₂/Si structure for application in gate electrodes

K. S. Kim, Y. C. Jang, K. J. Kim, N. E. Lee, S. P. Youn, K. J. Roh, Y. H. Roh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The interface formation and electrical properties between TiN_x and SiO₂ for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.

Original language	English
Pages (from-to)	1164-1169
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1345894
State	Published - Jul 2001

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title = "Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes",

abstract = "The interface formation and electrical properties between TiNx and SiO2 for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.",

author = "Kim, \{K. S.\} and Jang, \{Y. C.\} and Kim, \{K. J.\} and Lee, \{N. E.\} and Youn, \{S. P.\} and Roh, \{K. J.\} and Roh, \{Y. H.\}",

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AU - Kim, K. S.

AU - Jang, Y. C.

AU - Kim, K. J.

AU - Lee, N. E.

AU - Youn, S. P.

AU - Roh, K. J.

AU - Roh, Y. H.

PY - 2001/7

Y1 - 2001/7

N2 - The interface formation and electrical properties between TiNx and SiO2 for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.

AB - The interface formation and electrical properties between TiNx and SiO2 for application of a gate electrode were investgated as a function of annealing temperature. Auger electron spectroscopy (AES) and four point probe measurement were performed to measure the chemical composition and sheet resistance. X-ray photomission spectroscopy (XPS) depth profiling was used to investigate the interface formation of the films as a function of annealing temperature.

UR - https://www.scopus.com/pages/publications/0035394392

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SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Interface formation and electrical properties of a TiN_x/SiO₂/Si structure for application in gate electrodes

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