@inproceedings{de960fb61ef447039275ac4c1865e50f,
title = "Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors",
abstract = "Schottky source-drain (S/D) MOS transistor coupled with metal gate is a promising alternative to the conventional poly-Si gate and doped S/D MOSFET technology [1-2]. This paper explores through simulations the effect of metal S/D WF and the gradual change of barrier profile at the metal-semiconductor interface and in the few nanometers space around it on the n/p channel device performance. We present the S/D workfunction (WF) requirements for ultra short channel device design for the first time. Through modeling and fabrication, we also present the underlying physical explanation behind the existence of dual slope in Id-Vg characteristics of metal S/D and Gate MOSFETs.",
keywords = "Dual slope, Metal gate, Metal source/drain, Schottky source-drain, TBGD",
author = "Naveen Agrawal and Jingde Chen and Zhao Hui and Yeo, \{Yee Chia\} and Sungjoo Lee and Chan, \{Daniel S.H.\} and Li, \{Ming Fu\} and Samudra, \{Ganesh S.\}",
year = "2006",
doi = "10.1109/SISPAD.2006.282857",
language = "English",
isbn = "1424404045",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "139--142",
booktitle = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06",
note = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 ; Conference date: 06-09-2006 Through 08-09-2006",
}