TY - GEN
T1 - InP HBTs for THz frequency integrated circuits
AU - Urteaga, M.
AU - Seo, M.
AU - Hacker, J.
AU - Griffith, Z.
AU - Young, A.
AU - Pierson, R.
AU - Rowell, P.
AU - Skalare, A.
AU - Jain, V.
AU - Lobisser, E.
AU - Rodwell, M. J.W.
PY - 2011
Y1 - 2011
N2 - A 0.25μm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4μm 2 HBT exhibits an extrapolated f t/f max of 430GHz/1.03THz at I C =11mA, V CE= 1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BV CEO) >4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.
AB - A 0.25μm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4μm 2 HBT exhibits an extrapolated f t/f max of 430GHz/1.03THz at I C =11mA, V CE= 1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BV CEO) >4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.
UR - https://www.scopus.com/pages/publications/84858258480
M3 - Conference contribution
AN - SCOPUS:84858258480
SN - 9781457717536
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Y2 - 22 May 2011 through 26 May 2011
ER -