InP HBT Technologies for THz Integrated Circuits

Miguel Urteaga; Zach Griffith; Munkyo Seo; Jonathan Hacker; Mark J.W. Rodwell

doi:10.1109/JPROC.2017.2692178

InP HBT Technologies for THz Integrated Circuits

Miguel Urteaga
, Zach Griffith
, Munkyo Seo
, Jonathan Hacker
, Mark J.W. Rodwell

Department of Electronic and Electrical Engineering

Teledyne Technologies
University of California at Santa Barbara

Research output: Contribution to journal › Review article › peer-review

267 Scopus citations

Abstract

Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation (f_max) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.

Original language	English
Article number	7915698
Pages (from-to)	1051-1067
Number of pages	17
Journal	Proceedings of the IEEE
Volume	105
Issue number	6
DOIs	https://doi.org/10.1109/JPROC.2017.2692178
State	Published - Jun 2017

Keywords

Heterojunction bipolar transistor (HBT)
indium phosphide (InP)
terahertz (THz)

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10.1109/JPROC.2017.2692178

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@article{396f4e9853244563938c15cf633b10be,

title = "InP HBT Technologies for THz Integrated Circuits",

abstract = "Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation (fmax) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.",

keywords = "Heterojunction bipolar transistor (HBT), indium phosphide (InP), terahertz (THz)",

author = "Miguel Urteaga and Zach Griffith and Munkyo Seo and Jonathan Hacker and Rodwell, \{Mark J.W.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = jun,

doi = "10.1109/JPROC.2017.2692178",

language = "English",

volume = "105",

pages = "1051--1067",

journal = "Proceedings of the IEEE",

issn = "0018-9219",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - InP HBT Technologies for THz Integrated Circuits

AU - Urteaga, Miguel

AU - Griffith, Zach

AU - Seo, Munkyo

AU - Hacker, Jonathan

AU - Rodwell, Mark J.W.

PY - 2017/6

Y1 - 2017/6

N2 - Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation (fmax) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.

AB - Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation (fmax) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.

KW - Heterojunction bipolar transistor (HBT)

KW - indium phosphide (InP)

KW - terahertz (THz)

UR - https://www.scopus.com/pages/publications/85019027868

U2 - 10.1109/JPROC.2017.2692178

DO - 10.1109/JPROC.2017.2692178

M3 - Review article

AN - SCOPUS:85019027868

SN - 0018-9219

VL - 105

SP - 1051

EP - 1067

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

IS - 6

M1 - 7915698

ER -

InP HBT Technologies for THz Integrated Circuits

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Keywords

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