InP HBT integrated circuit technology for terahertz frequencies

M. Urteaga; M. Seo; J. Hacker; Z. Griffith; A. Young; R. Pierson; P. Rowell; A. Skalare; M. J.W. Rodwell

doi:10.1109/CSICS.2010.5619675

InP HBT integrated circuit technology for terahertz frequencies

M. Urteaga, M. Seo, J. Hacker, Z. Griffith, A. Young, R. Pierson, P. Rowell, A. Skalare, M. J.W. Rodwell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

66 Scopus citations

Abstract

We report on the development of a 0.25μm InP HBT technology suitable for integrated circuit demonstrations at the lower end of the THz frequency band (0.3-3THz). Transistors demonstrate an extrapolated f_max of >800GHz while maintaining a common-emitter breakdown voltage (BV _CEO) >4V. The transistors have been integrated in a full IC process that includes three-levels of interconnects, backside wafer thinning to 50μm with a through-wafer via process, and a backside etch singulation process that allows for the formation of free-standing integrated waveguide probes. The technology has been utilized to demonstrate amplifiers, fixed-frequency and voltage controlled oscillators and dynamic frequency dividers all operating at >300GHz.

Original language	English
Title of host publication	2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
DOIs	https://doi.org/10.1109/CSICS.2010.5619675
State	Published - 2010
Externally published	Yes
Event	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States Duration: 3 Oct 2010 → 6 Oct 2010

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Conference

Conference	2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
Country/Territory	United States
City	Monterey, CA
Period	3/10/10 → 6/10/10

Keywords

InP HBT
Terahertz
TMICs

Access to Document

10.1109/CSICS.2010.5619675

Cite this

Urteaga, M., Seo, M., Hacker, J., Griffith, Z., Young, A., Pierson, R., Rowell, P., Skalare, A., & Rodwell, M. J. W. (2010). InP HBT integrated circuit technology for terahertz frequencies. In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010 Article 5619675 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2010.5619675

@inproceedings{c9fbf90839844477b975af39f24fab62,

title = "InP HBT integrated circuit technology for terahertz frequencies",

abstract = "We report on the development of a 0.25μm InP HBT technology suitable for integrated circuit demonstrations at the lower end of the THz frequency band (0.3-3THz). Transistors demonstrate an extrapolated fmax of >800GHz while maintaining a common-emitter breakdown voltage (BV CEO) >4V. The transistors have been integrated in a full IC process that includes three-levels of interconnects, backside wafer thinning to 50μm with a through-wafer via process, and a backside etch singulation process that allows for the formation of free-standing integrated waveguide probes. The technology has been utilized to demonstrate amplifiers, fixed-frequency and voltage controlled oscillators and dynamic frequency dividers all operating at >300GHz.",

keywords = "InP HBT, Terahertz, TMICs",

author = "M. Urteaga and M. Seo and J. Hacker and Z. Griffith and A. Young and R. Pierson and P. Rowell and A. Skalare and Rodwell, \{M. J.W.\}",

year = "2010",

doi = "10.1109/CSICS.2010.5619675",

language = "English",

isbn = "9781424474387",

series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

booktitle = "2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010",

note = "2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 ; Conference date: 03-10-2010 Through 06-10-2010",

}

Urteaga, M, Seo, M, Hacker, J, Griffith, Z, Young, A, Pierson, R, Rowell, P, Skalare, A & Rodwell, MJW 2010, InP HBT integrated circuit technology for terahertz frequencies. in 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010., 5619675, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010, Monterey, CA, United States, 3/10/10. https://doi.org/10.1109/CSICS.2010.5619675

InP HBT integrated circuit technology for terahertz frequencies. / Urteaga, M.; Seo, M.; Hacker, J. et al.
2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. 2010. 5619675 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InP HBT integrated circuit technology for terahertz frequencies

AU - Urteaga, M.

AU - Seo, M.

AU - Hacker, J.

AU - Griffith, Z.

AU - Young, A.

AU - Pierson, R.

AU - Rowell, P.

AU - Skalare, A.

AU - Rodwell, M. J.W.

PY - 2010

Y1 - 2010

N2 - We report on the development of a 0.25μm InP HBT technology suitable for integrated circuit demonstrations at the lower end of the THz frequency band (0.3-3THz). Transistors demonstrate an extrapolated fmax of >800GHz while maintaining a common-emitter breakdown voltage (BV CEO) >4V. The transistors have been integrated in a full IC process that includes three-levels of interconnects, backside wafer thinning to 50μm with a through-wafer via process, and a backside etch singulation process that allows for the formation of free-standing integrated waveguide probes. The technology has been utilized to demonstrate amplifiers, fixed-frequency and voltage controlled oscillators and dynamic frequency dividers all operating at >300GHz.

AB - We report on the development of a 0.25μm InP HBT technology suitable for integrated circuit demonstrations at the lower end of the THz frequency band (0.3-3THz). Transistors demonstrate an extrapolated fmax of >800GHz while maintaining a common-emitter breakdown voltage (BV CEO) >4V. The transistors have been integrated in a full IC process that includes three-levels of interconnects, backside wafer thinning to 50μm with a through-wafer via process, and a backside etch singulation process that allows for the formation of free-standing integrated waveguide probes. The technology has been utilized to demonstrate amplifiers, fixed-frequency and voltage controlled oscillators and dynamic frequency dividers all operating at >300GHz.

KW - InP HBT

KW - Terahertz

KW - TMICs

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DO - 10.1109/CSICS.2010.5619675

M3 - Conference contribution

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SN - 9781424474387

T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

BT - 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010

T2 - 2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010

Y2 - 3 October 2010 through 6 October 2010

ER -

InP HBT integrated circuit technology for terahertz frequencies

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