@inproceedings{a81f7db44466444bb4dc46182b209378,
title = "InP HBT amplifier MMICs operating to 0.67 THz",
abstract = "Two indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based terahertz monolithic integrated circuit (TMIC) amplifiers are reported with record operating bandwidths up to 694 GHz. The first amplifier uses 3 μm long emitter transistors, has 24 dB gain at 670 GHz, and a saturated output power of -4 dBm at 585 GHz. The second amplifier uses 6 μm long emitter transistors, has 20 dB gain at 655 GHz, and a saturated output power of -0.7 dBm at 585 GHz. Both TMICs use Teledyne's 130nm InP DHBT transistors in a common base configuration and are matched using inverted CPW transmission lines realized using a three-metal-layer high-density thin-film interconnects system. These results demonstrate the capability of 130nm InP DHBT technology to enable sophisticated TMIC circuits for operation in the terahertz band.",
keywords = "Indium phosphide (InP) DHBT bipolar transistor, Submillimeter-wave, Terahertz, TMIC",
author = "Jonathan Hacker and Miguel Urteaga and Munkyo Seo and Anders Skalare and Robert Lin",
year = "2013",
doi = "10.1109/MWSYM.2013.6697518",
language = "English",
isbn = "9781467361767",
series = "IEEE MTT-S International Microwave Symposium Digest",
booktitle = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013",
note = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 ; Conference date: 02-06-2013 Through 07-06-2013",
}