TY - GEN
T1 - Innovative Gas Sensing Method Using Transient Behavior of FET-type Sensors with Gate Pulse Input
AU - Jung, Gyuweon
AU - Kim, Jaehyeon
AU - Shin, Wonjun
AU - Hong, Seongbin
AU - Jeong, Yujeong
AU - Lee, Chayoung
AU - Choi, Woo Young
AU - Lee, Jong Ho
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this work, we propose a new gas sensing method using the transient behaviors of FET-type gas sensors with gate pulse input. This method exploits the fact that gas reaction affects the time constants of transient I mathrm{D} curves by changing the R, C, and Q( ionized gas molecules) of the sensing material. By using transient I mathrm{D} with an appropriate read time instead of steady-state I mathrm{D}, the responses to 500 ppb NO2 and 50 ppm H2S gas increase 53.4 and 86.2 times, respectively. In addition, this method enables the sensor to detect 10 ppm H2S and 100 ppb NO2 gases in 1 s while consuming only 2.8 mJ. Furthermore, this approach enables the identification of 25 distinct gas mixtures using a single gas sensor for the first time.
AB - In this work, we propose a new gas sensing method using the transient behaviors of FET-type gas sensors with gate pulse input. This method exploits the fact that gas reaction affects the time constants of transient I mathrm{D} curves by changing the R, C, and Q( ionized gas molecules) of the sensing material. By using transient I mathrm{D} with an appropriate read time instead of steady-state I mathrm{D}, the responses to 500 ppb NO2 and 50 ppm H2S gas increase 53.4 and 86.2 times, respectively. In addition, this method enables the sensor to detect 10 ppm H2S and 100 ppb NO2 gases in 1 s while consuming only 2.8 mJ. Furthermore, this approach enables the identification of 25 distinct gas mixtures using a single gas sensor for the first time.
UR - https://www.scopus.com/pages/publications/85147534636
U2 - 10.1109/IEDM45625.2022.10019323
DO - 10.1109/IEDM45625.2022.10019323
M3 - Conference contribution
AN - SCOPUS:85147534636
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 3121
EP - 3124
BT - 2022 International Electron Devices Meeting, IEDM 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Electron Devices Meeting, IEDM 2022
Y2 - 3 December 2022 through 7 December 2022
ER -