Innovating Process in Heterojunction Back Contact Silicon Solar Cells Using Shadow Metal Masks

Youngseok Lee; Donghyun Oh; Hyeong Gi Park; Junsin Yi

doi:10.1007/s42341-024-00540-5

Innovating Process in Heterojunction Back Contact Silicon Solar Cells Using Shadow Metal Masks

Youngseok Lee
, Donghyun Oh
, Hyeong Gi Park
, Junsin Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We present a very simple process to fabricate silicon heterojunction back contact (HBC) solar cell. This process can easily form a backside structure using in situ masks without particular patterning process. Based on our silicon heterojunction (SHJ) solar cell process conditions, we optimize the process for HBC solar cell. The intrinsic a-Si: H layer and p-type a-Si: H layer process conditions were adjusted to improve to FF and efficiency. Applying these adjust, we obtained 18.1% efficiency of the HBC solar cell with V_OC of 684 mV, J_SC of 38.3 mA/cm², FF of 69.1%. The key factors affecting FF and performance of the HBC solar cell are also discussed.

Original language	English
Pages (from-to)	507-511
Number of pages	5
Journal	Transactions on Electrical and Electronic Materials
Volume	25
Issue number	4
DOIs	https://doi.org/10.1007/s42341-024-00540-5
State	Published - Aug 2024

Keywords

Back contact
Carrier transport
Fill factor
Heterojunction
Silicon solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1007/s42341-024-00540-5

Cite this

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title = "Innovating Process in Heterojunction Back Contact Silicon Solar Cells Using Shadow Metal Masks",

abstract = "We present a very simple process to fabricate silicon heterojunction back contact (HBC) solar cell. This process can easily form a backside structure using in situ masks without particular patterning process. Based on our silicon heterojunction (SHJ) solar cell process conditions, we optimize the process for HBC solar cell. The intrinsic a-Si: H layer and p-type a-Si: H layer process conditions were adjusted to improve to FF and efficiency. Applying these adjust, we obtained 18.1\% efficiency of the HBC solar cell with VOC of 684 mV, JSC of 38.3 mA/cm2, FF of 69.1\%. The key factors affecting FF and performance of the HBC solar cell are also discussed.",

keywords = "Back contact, Carrier transport, Fill factor, Heterojunction, Silicon solar cells",

author = "Youngseok Lee and Donghyun Oh and Park, \{Hyeong Gi\} and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} The Korean Institute of Electrical and Electronic Material Engineers 2024.",

year = "2024",

month = aug,

doi = "10.1007/s42341-024-00540-5",

language = "English",

volume = "25",

pages = "507--511",

journal = "Transactions on Electrical and Electronic Materials",

issn = "1229-7607",

publisher = "The Korean Institute of Electrical and Electronic Material Engineers",

number = "4",

}

TY - JOUR

T1 - Innovating Process in Heterojunction Back Contact Silicon Solar Cells Using Shadow Metal Masks

AU - Lee, Youngseok

AU - Oh, Donghyun

AU - Park, Hyeong Gi

AU - Yi, Junsin

N1 - Publisher Copyright: © The Korean Institute of Electrical and Electronic Material Engineers 2024.

PY - 2024/8

Y1 - 2024/8

N2 - We present a very simple process to fabricate silicon heterojunction back contact (HBC) solar cell. This process can easily form a backside structure using in situ masks without particular patterning process. Based on our silicon heterojunction (SHJ) solar cell process conditions, we optimize the process for HBC solar cell. The intrinsic a-Si: H layer and p-type a-Si: H layer process conditions were adjusted to improve to FF and efficiency. Applying these adjust, we obtained 18.1% efficiency of the HBC solar cell with VOC of 684 mV, JSC of 38.3 mA/cm2, FF of 69.1%. The key factors affecting FF and performance of the HBC solar cell are also discussed.

AB - We present a very simple process to fabricate silicon heterojunction back contact (HBC) solar cell. This process can easily form a backside structure using in situ masks without particular patterning process. Based on our silicon heterojunction (SHJ) solar cell process conditions, we optimize the process for HBC solar cell. The intrinsic a-Si: H layer and p-type a-Si: H layer process conditions were adjusted to improve to FF and efficiency. Applying these adjust, we obtained 18.1% efficiency of the HBC solar cell with VOC of 684 mV, JSC of 38.3 mA/cm2, FF of 69.1%. The key factors affecting FF and performance of the HBC solar cell are also discussed.

KW - Back contact

KW - Carrier transport

KW - Fill factor

KW - Heterojunction

KW - Silicon solar cells

UR - https://www.scopus.com/pages/publications/85191709795

U2 - 10.1007/s42341-024-00540-5

DO - 10.1007/s42341-024-00540-5

M3 - Article

AN - SCOPUS:85191709795

SN - 1229-7607

VL - 25

SP - 507

EP - 511

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 4

ER -

Innovating Process in Heterojunction Back Contact Silicon Solar Cells Using Shadow Metal Masks

Abstract

Keywords

UN SDGs

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