Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

Yong Hoon Kim; Kwang Ho Kim; Min Suk Oh; Hyun Jae Kim; Jeong In Han; Min Koo Han; Sung Kyu Park

doi:10.1109/LED.2010.2051404

Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

Yong Hoon Kim
, Kwang Ho Kim
, Min Suk Oh
, Hyun Jae Kim
, Jeong In Han
, Min Koo Han
, Sung Kyu Park

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm²Vs with an on/off current ratio that is greater than 10⁹ and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

Original language	English
Article number	5503990
Pages (from-to)	836-838
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	8
DOIs	https://doi.org/10.1109/LED.2010.2051404
State	Published - Aug 2010
Externally published	Yes

Keywords

Ink-jet printing
rapid thermal annealing
thin-film transistor
zinc-tin-oxide

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10.1109/LED.2010.2051404

Cite this

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title = "Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process",

abstract = "We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\textbackslash{}μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.",

keywords = "Ink-jet printing, rapid thermal annealing, thin-film transistor, zinc-tin-oxide",

author = "Kim, \{Yong Hoon\} and Kim, \{Kwang Ho\} and Oh, \{Min Suk\} and Kim, \{Hyun Jae\} and Han, \{Jeong In\} and Han, \{Min Koo\} and Park, \{Sung Kyu\}",

year = "2010",

month = aug,

doi = "10.1109/LED.2010.2051404",

language = "English",

volume = "31",

pages = "836--838",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Kim, Yong Hoon

AU - Kim, Kwang Ho

AU - Oh, Min Suk

AU - Kim, Hyun Jae

AU - Han, Jeong In

AU - Han, Min Koo

AU - Park, Sung Kyu

PY - 2010/8

Y1 - 2010/8

N2 - We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

AB - We report on high-performance ink-jet-printed amorphous zinctinoxide (α-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed α-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed α-ZTO TFTs (W/L =100μm/10\μm) have shown a carrier mobility of 4.98 cm2Vs with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The α-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

KW - Ink-jet printing

KW - rapid thermal annealing

KW - thin-film transistor

KW - zinc-tin-oxide

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DO - 10.1109/LED.2010.2051404

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

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ER -

Ink-jet-printed zinctinoxide thin-film transistors and circuits with rapid thermal annealing process

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Keywords

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