Injection charge assisted polarization reversal in ferroelectric thin films

Yunseok Kim; Simon Bühlmann; Seungbum Hong; Seung Hyun Kim; Kwangsoo No

doi:10.1063/1.2679902

Injection charge assisted polarization reversal in ferroelectric thin films

Yunseok Kim, Simon Bühlmann, Seungbum Hong, Seung Hyun Kim, Kwangsoo No

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

The authors have investigated the polarization reversal on ferroelectric thin films caused by a grounded tip on 50-nm -thick Pb (Zr,Ti) O3 films. Backswitching occurred when the grounded tip recontacted a "freshly" switched area. It is believed that the upper part of the film switches back due to the field between the grounded tip and previously injected charges. During dynamic operation, partial backswitching was observed during pulsed writing using pulse widths of 1 ms. The results show that polarization reversal is an issue, which has to be addressed in the writing scheme of future probe-based storage devices.

Original language	English
Article number	072910
Journal	Applied Physics Letters
Volume	90
Issue number	7
DOIs	https://doi.org/10.1063/1.2679902
State	Published - 2007
Externally published	Yes

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title = "Injection charge assisted polarization reversal in ferroelectric thin films",

abstract = "The authors have investigated the polarization reversal on ferroelectric thin films caused by a grounded tip on 50-nm -thick Pb (Zr,Ti) O3 films. Backswitching occurred when the grounded tip recontacted a {"}freshly{"} switched area. It is believed that the upper part of the film switches back due to the field between the grounded tip and previously injected charges. During dynamic operation, partial backswitching was observed during pulsed writing using pulse widths of 1 ms. The results show that polarization reversal is an issue, which has to be addressed in the writing scheme of future probe-based storage devices.",

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AU - Kim, Yunseok

AU - Bühlmann, Simon

AU - Hong, Seungbum

AU - Kim, Seung Hyun

AU - No, Kwangsoo

PY - 2007

Y1 - 2007

N2 - The authors have investigated the polarization reversal on ferroelectric thin films caused by a grounded tip on 50-nm -thick Pb (Zr,Ti) O3 films. Backswitching occurred when the grounded tip recontacted a "freshly" switched area. It is believed that the upper part of the film switches back due to the field between the grounded tip and previously injected charges. During dynamic operation, partial backswitching was observed during pulsed writing using pulse widths of 1 ms. The results show that polarization reversal is an issue, which has to be addressed in the writing scheme of future probe-based storage devices.

AB - The authors have investigated the polarization reversal on ferroelectric thin films caused by a grounded tip on 50-nm -thick Pb (Zr,Ti) O3 films. Backswitching occurred when the grounded tip recontacted a "freshly" switched area. It is believed that the upper part of the film switches back due to the field between the grounded tip and previously injected charges. During dynamic operation, partial backswitching was observed during pulsed writing using pulse widths of 1 ms. The results show that polarization reversal is an issue, which has to be addressed in the writing scheme of future probe-based storage devices.

UR - https://www.scopus.com/pages/publications/33847139018

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DO - 10.1063/1.2679902

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Injection charge assisted polarization reversal in ferroelectric thin films

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