Influence of hydrogen on SiO2 thick film deposited by PECVD and FHD for silica optical waveguide

Y. T. Kim; S. M. Cho; Y. G. Seo; H. D. Yoon; Y. M. Im; D. H. Yoon

doi:10.1002/crat.200290000

Influence of hydrogen on SiO₂ thick film deposited by PECVD and FHD for silica optical waveguide

Y. T. Kim
, S. M. Cho
, Y. G. Seo
, H. D. Yoon
, Y. M. Im
, D. H. Yoon

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Silicon dioxide(SiO₂) thick films have been deposited by plasma enhanced chemical vapor deposition(PECVD) and flame hydrolysis deposition(FHD). PECVD SiO₂ films were obtained at low temperatures(<350°C) by the decomposition of the appropriate mixture of (SiH₄+N₂O) gases under suitable rf power and N₂O/SiH₄ ratio. For low N₂O/SiH₄ ratio, a refractive index(n) value close to 1.50 is obtained. The deposition rate increased with the increase of rf power. FHD SiO₂ films were produced by the flame hydrolysis reaction of halide materials such as SiCl₄, POCl₃ and BCl₃ in an oxy-hydrogen torch. The porous SiO₂ layer, under the POCl₃/BCl₃ ratio deposition condition, has to be consolidated by annealing at around 1300°C.

Original language	English
Pages (from-to)	1257-1263
Number of pages	7
Journal	Crystal Research and Technology
Volume	37
Issue number	12
DOIs	https://doi.org/10.1002/crat.200290000
State	Published - 2002

Keywords

Annealing
Flame hydrolysis deposition
Plasma enhanced chemical vapor deposition
Silicon dioxide

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10.1002/crat.200290000

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@article{d4fdec266d244cb597aa58cf2dc3ffa2,

title = "Influence of hydrogen on SiO2 thick film deposited by PECVD and FHD for silica optical waveguide",

abstract = "Silicon dioxide(SiO2) thick films have been deposited by plasma enhanced chemical vapor deposition(PECVD) and flame hydrolysis deposition(FHD). PECVD SiO2 films were obtained at low temperatures(<350°C) by the decomposition of the appropriate mixture of (SiH4+N2O) gases under suitable rf power and N2O/SiH4 ratio. For low N2O/SiH4 ratio, a refractive index(n) value close to 1.50 is obtained. The deposition rate increased with the increase of rf power. FHD SiO2 films were produced by the flame hydrolysis reaction of halide materials such as SiCl4, POCl3 and BCl3 in an oxy-hydrogen torch. The porous SiO2 layer, under the POCl3/BCl3 ratio deposition condition, has to be consolidated by annealing at around 1300°C.",

keywords = "Annealing, Flame hydrolysis deposition, Plasma enhanced chemical vapor deposition, Silicon dioxide",

author = "Kim, \{Y. T.\} and Cho, \{S. M.\} and Seo, \{Y. G.\} and Yoon, \{H. D.\} and Im, \{Y. M.\} and Yoon, \{D. H.\}",

year = "2002",

doi = "10.1002/crat.200290000",

language = "English",

volume = "37",

pages = "1257--1263",

journal = "Crystal Research and Technology",

issn = "0232-1300",

publisher = "John Wiley \& Sons Inc.",

number = "12",

}

TY - JOUR

T1 - Influence of hydrogen on SiO2 thick film deposited by PECVD and FHD for silica optical waveguide

AU - Kim, Y. T.

AU - Cho, S. M.

AU - Seo, Y. G.

AU - Yoon, H. D.

AU - Im, Y. M.

AU - Yoon, D. H.

PY - 2002

Y1 - 2002

N2 - Silicon dioxide(SiO2) thick films have been deposited by plasma enhanced chemical vapor deposition(PECVD) and flame hydrolysis deposition(FHD). PECVD SiO2 films were obtained at low temperatures(<350°C) by the decomposition of the appropriate mixture of (SiH4+N2O) gases under suitable rf power and N2O/SiH4 ratio. For low N2O/SiH4 ratio, a refractive index(n) value close to 1.50 is obtained. The deposition rate increased with the increase of rf power. FHD SiO2 films were produced by the flame hydrolysis reaction of halide materials such as SiCl4, POCl3 and BCl3 in an oxy-hydrogen torch. The porous SiO2 layer, under the POCl3/BCl3 ratio deposition condition, has to be consolidated by annealing at around 1300°C.

AB - Silicon dioxide(SiO2) thick films have been deposited by plasma enhanced chemical vapor deposition(PECVD) and flame hydrolysis deposition(FHD). PECVD SiO2 films were obtained at low temperatures(<350°C) by the decomposition of the appropriate mixture of (SiH4+N2O) gases under suitable rf power and N2O/SiH4 ratio. For low N2O/SiH4 ratio, a refractive index(n) value close to 1.50 is obtained. The deposition rate increased with the increase of rf power. FHD SiO2 films were produced by the flame hydrolysis reaction of halide materials such as SiCl4, POCl3 and BCl3 in an oxy-hydrogen torch. The porous SiO2 layer, under the POCl3/BCl3 ratio deposition condition, has to be consolidated by annealing at around 1300°C.

KW - Annealing

KW - Flame hydrolysis deposition

KW - Plasma enhanced chemical vapor deposition

KW - Silicon dioxide

UR - https://www.scopus.com/pages/publications/0036954794

U2 - 10.1002/crat.200290000

DO - 10.1002/crat.200290000

M3 - Article

AN - SCOPUS:0036954794

SN - 0232-1300

VL - 37

SP - 1257

EP - 1263

JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 12

ER -

Influence of hydrogen on SiO₂ thick film deposited by PECVD and FHD for silica optical waveguide

Abstract

Keywords

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