Influence of hydrogen on a-SiC:H films deposited by RF PECVD and annealing effect

D. H. Yoon; S. J. Suh; Y. T. Kim; B. Hong; G. E. Jang

Influence of hydrogen on a-SiC:H films deposited by RF PECVD and annealing effect

D. H. Yoon, S. J. Suh, Y. T. Kim, B. Hong, G. E. Jang

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Effects of annealing temperature(T_a) on the structure of hydrogenated amorphous silicon carbide (a-SiC:H) films are prepared by RF PECVD method. It is found that an annealing process results in structural rearrangement and evacuation of hydrogen atoms from CH_n and SiH_n bonds. The emission of hydrogen bonded to silicon and carbon are responsible for the decrease of optical band gap (E_opt) by 0.70 eV in the range of T_a from 300 ° to 600 °C. The density of Si-H bonds decrease from 2.67 × 10²¹ cm^-3 for the as-deposited film to 0.303 × 10²¹ cm^-3 at 700 °C. The density of C-H bonds similarly decrease from 3.608 × 10²¹ cm^-3 for the as-deposited film to 0.537 × 10²¹ cm^-3 for 700 °C T_a.

Original language	English
Pages (from-to)	S943-S946
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SUPPL.2
State	Published - Feb 2003
Event	Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA - Jeju Island, Korea, Republic of Duration: 1 Jul 2002 → 4 Jul 2002

Keywords

Annealing
Plasma enhanced chemical vapor deposition
Silicon carbide(SiC)

Cite this

@article{7e655d83004c4129b653b42092955108,

title = "Influence of hydrogen on a-SiC:H films deposited by RF PECVD and annealing effect",

abstract = "Effects of annealing temperature(Ta) on the structure of hydrogenated amorphous silicon carbide (a-SiC:H) films are prepared by RF PECVD method. It is found that an annealing process results in structural rearrangement and evacuation of hydrogen atoms from CHn and SiHn bonds. The emission of hydrogen bonded to silicon and carbon are responsible for the decrease of optical band gap (Eopt) by 0.70 eV in the range of Ta from 300 ° to 600 °C. The density of Si-H bonds decrease from 2.67 × 1021 cm-3 for the as-deposited film to 0.303 × 1021 cm-3 at 700 °C. The density of C-H bonds similarly decrease from 3.608 × 1021 cm-3 for the as-deposited film to 0.537 × 1021 cm-3 for 700 °C Ta.",

keywords = "Annealing, Plasma enhanced chemical vapor deposition, Silicon carbide(SiC)",

author = "Yoon, \{D. H.\} and Suh, \{S. J.\} and Kim, \{Y. T.\} and B. Hong and Jang, \{G. E.\}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S943--S946",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL.2",

note = "Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA ; Conference date: 01-07-2002 Through 04-07-2002",

}

TY - JOUR

T1 - Influence of hydrogen on a-SiC:H films deposited by RF PECVD and annealing effect

AU - Yoon, D. H.

AU - Suh, S. J.

AU - Kim, Y. T.

AU - Hong, B.

AU - Jang, G. E.

PY - 2003/2

Y1 - 2003/2

N2 - Effects of annealing temperature(Ta) on the structure of hydrogenated amorphous silicon carbide (a-SiC:H) films are prepared by RF PECVD method. It is found that an annealing process results in structural rearrangement and evacuation of hydrogen atoms from CHn and SiHn bonds. The emission of hydrogen bonded to silicon and carbon are responsible for the decrease of optical band gap (Eopt) by 0.70 eV in the range of Ta from 300 ° to 600 °C. The density of Si-H bonds decrease from 2.67 × 1021 cm-3 for the as-deposited film to 0.303 × 1021 cm-3 at 700 °C. The density of C-H bonds similarly decrease from 3.608 × 1021 cm-3 for the as-deposited film to 0.537 × 1021 cm-3 for 700 °C Ta.

AB - Effects of annealing temperature(Ta) on the structure of hydrogenated amorphous silicon carbide (a-SiC:H) films are prepared by RF PECVD method. It is found that an annealing process results in structural rearrangement and evacuation of hydrogen atoms from CHn and SiHn bonds. The emission of hydrogen bonded to silicon and carbon are responsible for the decrease of optical band gap (Eopt) by 0.70 eV in the range of Ta from 300 ° to 600 °C. The density of Si-H bonds decrease from 2.67 × 1021 cm-3 for the as-deposited film to 0.303 × 1021 cm-3 at 700 °C. The density of C-H bonds similarly decrease from 3.608 × 1021 cm-3 for the as-deposited film to 0.537 × 1021 cm-3 for 700 °C Ta.

KW - Annealing

KW - Plasma enhanced chemical vapor deposition

KW - Silicon carbide(SiC)

UR - https://www.scopus.com/pages/publications/0037307920

M3 - Conference article

AN - SCOPUS:0037307920

SN - 0374-4884

VL - 42

SP - S943-S946

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL.2

T2 - Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA

Y2 - 1 July 2002 through 4 July 2002

ER -

Influence of hydrogen on a-SiC:H films deposited by RF PECVD and annealing effect

Abstract

Keywords

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