Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

T. E. Park; B. H. Kong; H. K. Cho; D. J. Park; J. Y. Lee

doi:10.1016/j.physb.2005.12.184

Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

T. E. Park
, B. H. Kong
, H. K. Cho
, D. J. Park
, J. Y. Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

In the growth of ZnO films using radio-frequency magnetron sputtering, the effects of the injected ambient gas during the temperature elevation and the in-situ thermal annealing after the growth of the low-temperature buffer layers on the optical and structural quality were investigated. The introduction of inert gases such as argon and nitrogen as the ambient gases during the thermal treatments of the buffer layers led simultaneously to the reduction of full-width at half maximum (FWHM) value in the X-ray diffraction (XRD) rocking curve and the improved emission properties, compared to the samples using oxygen gas. Also, the use of inert gases caused a decreased tilting of the grains and the peak shift of the deep-level emission from the yellow region to the green region.

Original language	English
Pages (from-to)	735-740
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.184
State	Published - 1 Apr 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 24 Jul 2005 → 29 Jul 2005

Keywords

Buffer layer
In-situ annealing
Inert gas
Sputtering
ZnO

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10.1016/j.physb.2005.12.184

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title = "Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering",

abstract = "In the growth of ZnO films using radio-frequency magnetron sputtering, the effects of the injected ambient gas during the temperature elevation and the in-situ thermal annealing after the growth of the low-temperature buffer layers on the optical and structural quality were investigated. The introduction of inert gases such as argon and nitrogen as the ambient gases during the thermal treatments of the buffer layers led simultaneously to the reduction of full-width at half maximum (FWHM) value in the X-ray diffraction (XRD) rocking curve and the improved emission properties, compared to the samples using oxygen gas. Also, the use of inert gases caused a decreased tilting of the grains and the peak shift of the deep-level emission from the yellow region to the green region.",

keywords = "Buffer layer, In-situ annealing, Inert gas, Sputtering, ZnO",

author = "Park, \{T. E.\} and Kong, \{B. H.\} and Cho, \{H. K.\} and Park, \{D. J.\} and Lee, \{J. Y.\}",

year = "2006",

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doi = "10.1016/j.physb.2005.12.184",

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issn = "0921-4526",

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note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

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TY - JOUR

T1 - Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

AU - Park, T. E.

AU - Kong, B. H.

AU - Cho, H. K.

AU - Park, D. J.

AU - Lee, J. Y.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - In the growth of ZnO films using radio-frequency magnetron sputtering, the effects of the injected ambient gas during the temperature elevation and the in-situ thermal annealing after the growth of the low-temperature buffer layers on the optical and structural quality were investigated. The introduction of inert gases such as argon and nitrogen as the ambient gases during the thermal treatments of the buffer layers led simultaneously to the reduction of full-width at half maximum (FWHM) value in the X-ray diffraction (XRD) rocking curve and the improved emission properties, compared to the samples using oxygen gas. Also, the use of inert gases caused a decreased tilting of the grains and the peak shift of the deep-level emission from the yellow region to the green region.

AB - In the growth of ZnO films using radio-frequency magnetron sputtering, the effects of the injected ambient gas during the temperature elevation and the in-situ thermal annealing after the growth of the low-temperature buffer layers on the optical and structural quality were investigated. The introduction of inert gases such as argon and nitrogen as the ambient gases during the thermal treatments of the buffer layers led simultaneously to the reduction of full-width at half maximum (FWHM) value in the X-ray diffraction (XRD) rocking curve and the improved emission properties, compared to the samples using oxygen gas. Also, the use of inert gases caused a decreased tilting of the grains and the peak shift of the deep-level emission from the yellow region to the green region.

KW - Buffer layer

KW - In-situ annealing

KW - Inert gas

KW - Sputtering

KW - ZnO

UR - https://www.scopus.com/pages/publications/33645133409

U2 - 10.1016/j.physb.2005.12.184

DO - 10.1016/j.physb.2005.12.184

M3 - Conference article

AN - SCOPUS:33645133409

SN - 0921-4526

VL - 376-377

SP - 735

EP - 740

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

Abstract

Keywords

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