Abstract
Thin films of ZrO2 were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters such as RF power magnitude O2 flux and annealing temperature, etc. on the film structure and electrical properties, a systematic study using I-V and C-V was mainly carried out in this study. Moreover, the as-grown thin films were characterized with FT-IR, SEM, XPS measurements to analyze their surface characteristics. XPS analysis of Zr3d5/2 line has been performed on ZrO2 films in the amorphous state before annealing. After annealing, charging effect appeared in the ZrO2 film and this binding energy shift was correlated with the insulating property. FT-IR spectra show that the oxygen stretching peaks become strongly after annealing. And we observed that inter diffusion after annealing caused oxygen of ZrO2 surface. Refractive index of ZrO2 thin film is improved by annealing. The leakage current density and capacitance property were also increased by O2 flux. From the I-V and C-V measurements, dielectric constant and leakage current density were also observed to be 25.75 and 1×10 -7 A/cm2.
| Original language | English |
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| Pages (from-to) | 415 |
| Number of pages | 1 |
| Journal | IEEE International Conference on Plasma Science |
| State | Published - 2003 |
| Event | 2003 IEEE International Conference on Plasma Science - Jeju, Korea, Republic of Duration: 2 Jun 2003 → 5 Jun 2003 |