Inductively coupled plasma etching of chemical-vapor-deposited amorphous carbon in N2/H2/Ar chemistries

Hag Joo Lee; Bong Soo Kwon; Young Rok Park; Joung Ho Ahn; Jin Sung Kim; N. E. Lee; J. W. Shon

doi:10.3938/jkps.56.1441

Inductively coupled plasma etching of chemical-vapor-deposited amorphous carbon in N₂/H₂/Ar chemistries

Hag Joo Lee
, Bong Soo Kwon
, Young Rok Park
, Joung Ho Ahn
, Jin Sung Kim
, N. E. Lee
, J. W. Shon

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this study, we investigated the etching characteristics and the mechanism of an amorphous carbon (a-C) layer for a multi-level resist (MLR) structure. CVD (chemical-vapor-deposited) a-C layers with a SiO₂ hard-mask were etched in an ICP (inductively coupled plasma) etcher while varying the process parameters, such as the top electrode power, the bottom electrode power, and the gas flow ratio in the N₂/H₂/Ar plasma. The results indicated that the etch rate and the profile angle of the CVD a-C increased with increasing H₂ gas flow ratio in the N ₂/H₂/Ar plasma. As the H₂ flow ratio increased, the etch rate and the profile angle increase, due to the increased formation of H radicals in the plasma, leading to enhanced chemical reactions with carbon atoms. Also, the etch rate of the CVD a-C increased with increasing top and bottom electrode powers.

Original language	English
Pages (from-to)	1441-1445
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	5
DOIs	https://doi.org/10.3938/jkps.56.1441
State	Published - 14 May 2010

Keywords

Cvd a-c
Inductively coupled plasma
Multi-level resist
Plasma etching

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10.3938/jkps.56.1441

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@article{2055106861304e288f036e84717de305,

title = "Inductively coupled plasma etching of chemical-vapor-deposited amorphous carbon in N2/H2/Ar chemistries",

abstract = "In this study, we investigated the etching characteristics and the mechanism of an amorphous carbon (a-C) layer for a multi-level resist (MLR) structure. CVD (chemical-vapor-deposited) a-C layers with a SiO2 hard-mask were etched in an ICP (inductively coupled plasma) etcher while varying the process parameters, such as the top electrode power, the bottom electrode power, and the gas flow ratio in the N2/H2/Ar plasma. The results indicated that the etch rate and the profile angle of the CVD a-C increased with increasing H2 gas flow ratio in the N 2/H2/Ar plasma. As the H2 flow ratio increased, the etch rate and the profile angle increase, due to the increased formation of H radicals in the plasma, leading to enhanced chemical reactions with carbon atoms. Also, the etch rate of the CVD a-C increased with increasing top and bottom electrode powers.",

keywords = "Cvd a-c, Inductively coupled plasma, Multi-level resist, Plasma etching",

author = "Lee, \{Hag Joo\} and Kwon, \{Bong Soo\} and Park, \{Young Rok\} and Ahn, \{Joung Ho\} and Kim, \{Jin Sung\} and Lee, \{N. E.\} and Shon, \{J. W.\}",

year = "2010",

month = may,

day = "14",

doi = "10.3938/jkps.56.1441",

language = "English",

volume = "56",

pages = "1441--1445",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Inductively coupled plasma etching of chemical-vapor-deposited amorphous carbon in N2/H2/Ar chemistries

AU - Lee, Hag Joo

AU - Kwon, Bong Soo

AU - Park, Young Rok

AU - Ahn, Joung Ho

AU - Kim, Jin Sung

AU - Lee, N. E.

AU - Shon, J. W.

PY - 2010/5/14

Y1 - 2010/5/14

N2 - In this study, we investigated the etching characteristics and the mechanism of an amorphous carbon (a-C) layer for a multi-level resist (MLR) structure. CVD (chemical-vapor-deposited) a-C layers with a SiO2 hard-mask were etched in an ICP (inductively coupled plasma) etcher while varying the process parameters, such as the top electrode power, the bottom electrode power, and the gas flow ratio in the N2/H2/Ar plasma. The results indicated that the etch rate and the profile angle of the CVD a-C increased with increasing H2 gas flow ratio in the N 2/H2/Ar plasma. As the H2 flow ratio increased, the etch rate and the profile angle increase, due to the increased formation of H radicals in the plasma, leading to enhanced chemical reactions with carbon atoms. Also, the etch rate of the CVD a-C increased with increasing top and bottom electrode powers.

AB - In this study, we investigated the etching characteristics and the mechanism of an amorphous carbon (a-C) layer for a multi-level resist (MLR) structure. CVD (chemical-vapor-deposited) a-C layers with a SiO2 hard-mask were etched in an ICP (inductively coupled plasma) etcher while varying the process parameters, such as the top electrode power, the bottom electrode power, and the gas flow ratio in the N2/H2/Ar plasma. The results indicated that the etch rate and the profile angle of the CVD a-C increased with increasing H2 gas flow ratio in the N 2/H2/Ar plasma. As the H2 flow ratio increased, the etch rate and the profile angle increase, due to the increased formation of H radicals in the plasma, leading to enhanced chemical reactions with carbon atoms. Also, the etch rate of the CVD a-C increased with increasing top and bottom electrode powers.

KW - Cvd a-c

KW - Inductively coupled plasma

KW - Multi-level resist

KW - Plasma etching

UR - https://www.scopus.com/pages/publications/77954851321

U2 - 10.3938/jkps.56.1441

DO - 10.3938/jkps.56.1441

M3 - Article

AN - SCOPUS:77954851321

SN - 0374-4884

VL - 56

SP - 1441

EP - 1445

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 5

ER -

Inductively coupled plasma etching of chemical-vapor-deposited amorphous carbon in N₂/H₂/Ar chemistries

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Keywords

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