Abstract
Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90°C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cm × 20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%.
| Original language | English |
|---|---|
| Pages (from-to) | 311-314 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 178 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - May 2001 |
| Event | Materials Science with Ion Beams - Strasbourg, France Duration: 30 May 2000 → 2 Jun 2000 |
Keywords
- IBAE
- ITO
- Oxygen ion beam
- PC
- Radical
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