Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

Dong Ho Kang; Jin Hong Park

doi:10.1016/j.materresbull.2014.09.037

Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

Dong Ho Kang
, Jin Hong Park

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250°C and 400°C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400°C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

Original language	English
Pages (from-to)	814-818
Number of pages	5
Journal	Materials Research Bulletin
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/j.materresbull.2014.09.037
State	Published - Dec 2014

Keywords

A. Amorphous materials
C. X-ray diffraction
D. Electrical properties

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10.1016/j.materresbull.2014.09.037

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title = "Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)",

abstract = "In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250°C and 400°C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400°C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.",

keywords = "A. Amorphous materials, C. X-ray diffraction, D. Electrical properties",

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journal = "Materials Research Bulletin",

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T1 - Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

AU - Kang, Dong Ho

AU - Park, Jin Hong

PY - 2014/12

Y1 - 2014/12

N2 - In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250°C and 400°C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400°C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

AB - In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250°C and 400°C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400°C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

KW - A. Amorphous materials

KW - C. X-ray diffraction

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84949130448

U2 - 10.1016/j.materresbull.2014.09.037

DO - 10.1016/j.materresbull.2014.09.037

M3 - Article

AN - SCOPUS:84949130448

SN - 0025-5408

VL - 60

SP - 814

EP - 818

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 1

ER -

Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

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Keywords

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